Mechanism for disorder on GaAs(001)-(2{times}4) surfaces

Journal Article · Mon Apr 01 04:00:00 EST 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.76.3344· OSTI ID:285653

Avery, A R; Goringe, C M; Holmes, D M; Sudijono, J L; Jones, T S ^[1]

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1. Interdisciplinary Research Centre for Semiconductor Materials and Department of Chemistry, Imperial College, London, SW7 2AY (United Kingdom)

An atomistic model is presented based on scanning tunneling microscopy results and tight binding calculations which explains the observation of disorder on the GaAs(001)-(2{times}4) surface grown by molecular beam epitaxy. Calculations show that occupation by As of vacant Ga sites in the missing dimer trenches of the (2{times}4) unit cell is responsible for the surface disorder in the form of kinks in the dimer rows. The disordered surface is energetically favorable for a range of additional As coverage up to 0.25 monolayer. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 285653
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 18 Vol. 76; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISORDERED SYSTEMS
ELECTRON MICROSCOPY
GALLIUM ARSENIDES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
SITE OCCUPATION
STM
SURFACE PROPERTIES
SURFACE RECONSTRUCTION
SURFACE STRUCTURE
SURFACES
TIGHT BINDING APPROXIMATION
VACANCIES