Model for predicting the effects of device geometry on the capacitance of field emitter array cathodes

Journal Article · Thu Jul 01 04:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586928· OSTI ID:161692

Ohlinger, W L; Hill, D N; Feeney, R K ^[1]

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1. Georgia Institute of Technology, Atlanta, GA (United States); and others

Successful application of field emitter array cathodes at microwave frequencies is dependent upon significant progress in emitter development. Two factors are of primary concern, namely, the transconductance and the array capacitance. To provide guidance in development of structures with minimum capacitance, a scaled, physical model of an emitter array has been developed and used to study qualitatively the effect of several geometrical and materials parameters on device capacitance. In this article the effects of an insulating versus a conducting substrate, and variation of the insulator film thickness, extractor aperture diameter, and extractor film thickness are reported. It is shown that the array capacitance is primarily determined by the details of the extractor aperture-emitter tip geometry, and is not influenced by the extractor to substrate spacing unless the insulator film thickness is substantially less than one-half the pin-to-pin spacing in the array. Although the results are not intended to be quantitative, it is estimated that the Georgia Tech field emitter array cathodes, based on oxide-metal composite materials composed of single-crystal tungsten emitter tips in an insulating zirconium dioxide matrix (substrate), display capacitances of the order of 1X10{sup -16} Farads/pin. 5 refs., 9 figs., 1 tab.

• OSTI ID: 161692
• Report Number(s): CONF-930115--; CNN: Contract MDA972-91-C-0034
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 11; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
APERTURES
CAPACITANCE
CATHODES
COMPOSITE MATERIALS
DIELECTRIC PROPERTIES
TUNGSTEN
ZIRCONIUM OXIDES