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Current limiting of field emitter array cathodes

Thesis/Dissertation ·
OSTI ID:6621021
The Field Emitter Array (FEA) cathode possesses high emission potential (approx.30A/cm/sup 2/) at low applied voltages (100-200 volts) but performance has been hampered by non-uniform emission across the array. Poor emission uniformity is mainly related to small variations in emitter tip geometry (of the order of 10-100A), which cannot be rectified by present fabrication techniques. To improve emission uniformity from the arrays, this dissertation investigated the use of current-limiting resistors, individually dedicated to and in series with each emitter, to compensate for the differences in emission. A thin film of silicon was deposited on the backside of a ZrO/sub 2/-W composite chip (the substrate on which emitter structure was based) to form series resistors. Characterization of the silicon film was carried out in a SEM with a micromanipulator capable of making contact with a single tungsten pin so that direct I-V measurement of individual series resistors was possible. To supplement the experimental effort, a mathematical mode of the Current-Limited Field Emitter Array (CLFEA) cathode was devised. A study of the model indicated the Fowler-Nordheim (F-N) plot of resistor current-limited emission from an array would have an upturning curvature.
Research Organization:
Georgia Inst. of Tech., Atlanta (USA)
OSTI ID:
6621021
Country of Publication:
United States
Language:
English