Field emitter array analysis for the design of inductive output amplifiers
- Naval Research Lab., Washington, DC (United States)
The ability to modulate the beam density upon emission in ways which allow for high frequency and good spatial localization generates the opportunity for significant improvements in RF device performance. Spatiotemporal modulation at the cathode surface promises to address these concerns. Field emitter arrays (FEA`s) are therefore under consideration for the gated beam source in inductive output amplifiers (IOA) now being designed. Electron emission from FEA`s may be described to a good approximation by the Spindt form of the Fowler-Nordheim equation. Device performance of the IOA`s, in terms of efficiency, gain, and bandwidth, entails certain demands on the FEA cathode element, characterized by limits on the A and B parameters, as well as the transconductance and capacitance of the unit cell. In this presentation, they show the demands on geometric and material parameters that are required to meet IOA objectives. In this presentation, they show, for a range of geometrical and material parameters, the Fowler Nordheim A and B, capacitances, and transconductances they entail.
- OSTI ID:
- 170186
- Report Number(s):
- CONF-950612--; ISBN 0-7803-2669-5
- Country of Publication:
- United States
- Language:
- English
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