Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

Sulzbach, Milena Cervo; Estandía, Saúl; Long, Xiao; Lyu, Jike; Dix, Nico; Gàzquez, Jaume; Chisholm, Matthew F.; Sánchez, Florencio; Fina, Ignasi; Fontcuberta, Josep

doi:10.1002/aelm.201900852

Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf_0.5Zr_0.5O₂ Tunnel Junctions

Journal Article · Thu Nov 14 00:00:00 UTC 2019 · Advanced Electronic Materials

DOI:https://doi.org/10.1002/aelm.201900852· OSTI ID:1606631

Sulzbach, Milena Cervo ^[1]; Estandía, Saúl ^[1]; Long, Xiao ^[1]; Lyu, Jike ^[1]; Dix, Nico ^[1]; Gàzquez, Jaume ^[1]; ^[2]; ^[1]; ^[1]; Fontcuberta, Josep ^[1]

Univ. Autònoma de Barcelona (Spain). Inst. de Ciència de Materials de Barcelona (ICMAB-CSIC)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

Tunnel devices based on ferroelectric Hf_0.5Zr_0.5O₂ (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Herein, the fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈10³–10⁵%) electroresistance when both phases coexist.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: China Scholarship Council (CSC); Generalitat de Catalunya; Ramón y Cajal; Spanish Ministry of Economy, Competitiveness and Universities; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; “la Caixa Foundation”

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1606631

Journal Information:: Advanced Electronic Materials, Journal Name: Advanced Electronic Materials Journal Issue: 1 Vol. 6; ISSN 2199-160X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Magneto-ionic control of spin polarization in multiferroic tunnel junctions Wei, Yingfen; Matzen, Sylvia; Quinteros, Cynthia P. npj Quantum Materials, Vol. 4, Issue 1 https://doi.org/10.1038/s41535-019-0201-0	journal	December 2019

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36 MATERIALS SCIENCE
Hf0.5Zr0.5O2
ferroelectric tunnel junctions
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