Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Estandía, Saúl; Dix, Nico; Gazquez, Jaume; Fina, Ignasi; Lyu, Jike; Chisholm, Matthew F.; Fontcuberta, Josep; Sánchez, Florencio

doi:10.1021/acsaelm.9b00256

Engineering Ferroelectric Hf_0.5Zr_0.5O₂ Thin Films by Epitaxial Stress

Journal Article · Wed Jul 03 00:00:00 UTC 2019 · ACS Applied Electronic Materials

DOI:https://doi.org/10.1021/acsaelm.9b00256· OSTI ID:2572166

Estandía, Saúl ^[1]; Dix, Nico ^[1]; Gazquez, Jaume ^[1]; ^[1]; Lyu, Jike ^[1]; Chisholm, Matthew F. ^[2]; Fontcuberta, Josep ^[1]; ^[1]

Univ. Autonoma de Barcelona (Spain); Inst. de Ciencia de Materials de Barcelona (ICMAB-CSIC), Catalonia (Spain)
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)

The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf_0.5Zr_0.5O₂ (HZO) and La_0.67Sr_0.33MnO₃ (LSMO) electrodes were grown on a set of single crystalline oxide (001)-oriented (cubic or pseudocubic setting) substrates with a lattice parameter in the 3.71–4.21 Å range. The lattice strain of the LSMO electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of HZO. On tensilely strained LSMO electrodes, most of the HZO film is orthorhombic, whereas the monoclinic phase is favored when LSMO is relaxed or compressively strained. Therefore, the HZO films on TbScO₃ and GdScO₃ substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO₃. In conclusion, the capability of having epitaxial doped HfO₂ films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO₂ films.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: China Scholarship Council (CSC); European Social Fund; Generalitat de Catalunya; Ministerio de Economía, Industria y Competitividad; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE)

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 2572166

Journal Information:: ACS Applied Electronic Materials, Journal Name: ACS Applied Electronic Materials Journal Issue: 8 Vol. 1; ISSN 2637-6113

Publisher:: ACS PublicationsCopyright Statement

Country of Publication:: United States

Language:: English

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