Enhancing Photocarrier Bulk Lifetime with Defect Engineering of Polycrystalline Passivated-Contact n-Cz Photovoltaic Devices

Conference · Thu Feb 06 00:00:00 EST 2020

DOI:https://doi.org/10.1109/PVSC40753.2019.8980680· OSTI ID:1603883

LaSalvia, Vincenzo A ^[1]; Meyer, Abigail R ^[1]; Nemeth, William M ^[1]; Young, David L ^[1]; Page, Matthew ^[1]; Stradins, Pauls ^[1]

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1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)

We study the photocarrier lifetime evolution of n-Cz Si material throughout the processing sequence for polycrystalline passivated contact devices. We show that a high temperature annealing pretreatment (known as Tabula Rasa) has a clear effect on enhancing bulk lifetimes of n-Cz Si. We further this development by integrating such defect engineering into the lower-temperature annealing of passivated contact. By applying oxidizing ambient gases during these anneals we report a photocarrier lifetime enhancement over an N 2 environment. This enhancement is exhibited in a 1-sun iV OC of 735 mV when annealed in O 2 rather than 708 mV in N 2.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1603883
• Report Number(s): NREL/CP-5900-73171
• Resource Relation: Conference: Presented at the 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 16-21 June 2019, Chicago, Illinois
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
photocarrier lifetime
monocrystalline silicon
Czochralski
intrinsic point defects
passivation
thermal processing