Front/Back Poly-Si/SiO2 Passivated Contact Device with Voc > 720 mV
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
We report on front/back poly-Si/SiO2 passivated contact solar cells with iVoc > 735 mV and Voc > 720 mV. The devices were grown on n-Cz wafers using PECVD to deposit doped a-Si layers which were then annealed at 850 degrees C. Our best device has an efficiency of 21% which is limited by: (1) low current density from a large grid shadow loss and parasitic absorption in the front poly-Si:P layer; and (2) high series resistance from a high Al-poly-Si:P contact resistivity. We discuss the role of high temperature anneals throughout the process flow to preserve and improve the bulk lifetime of the n-Cz wafers.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1558345
- Report Number(s):
- NREL/CP-5900-72446
- Country of Publication:
- United States
- Language:
- English
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