Effect of solvent, electrolyte, and surfactants on the electrode behavior of ion-selective field-effect transistors with silicon(IV) oxide and tantalum(V) oxide films

Journal Article · Wed Jun 10 04:00:00 EDT 1992 · Russian Journal of Applied Chemistry

OSTI ID:160257

Bobrov, P V; Bratov, A V; Tarantov, Y A

The electrode behavior of dielectric oxide films (SiO{sub 2}, Al{sub 2}O{sub 3}, ZrO{sub 2}, Ta{sub 2}O{sub 5}) on the surface of silicon has recently stimulated significant interest due to their use as pH-sensitive membranes for microelectronic chemical sensors - ion-selective field-effect transistors (ISFET) and photoelectronic potentiometric diodes. Despite the fact that these sensors are already being used in different analytical chemical devices, the mechanism of their operation is still unclear. The model of surface bound states (SBS) initially proposed for describing the electrosurface properties of metal oxide powders and subsequently used for explaining the sub-Nernstian pH response of ISFET with SiO{sub 2} and Al{sub 2}O{sub 3} films and the effect of ions from the base electrolyte on it has become the most common model in explaining the pH-sensitivity of oxide films. This model is also used in the present study for describing the Nernstian behavior of ISFET with films of other oxides. 15 refs., 4 figs., 2 tabs.

• OSTI ID: 160257
• Journal Information: Russian Journal of Applied Chemistry, Journal Name: Russian Journal of Applied Chemistry Journal Issue: 12 Vol. 64; ISSN 1070-4272; ISSN RJACEO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL PROPERTIES
ELECTROLYTES
FIELD EFFECT TRANSISTORS
FILMS
SILICON OXIDES
SOLVENTS
SURFACTANTS
TANTALUM OXIDES