The ion sensitivity of boron implanted silicon nitride chemical sensors

Journal Article · Sun Oct 01 04:00:00 EDT 1989 · Journal of the Electrochemical Society; (USA)

DOI:https://doi.org/10.1149/1.2096384· OSTI ID:5049948

Wong, H S; Hu, Y; White, M H ^[1]

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1. Lehigh Univ., Bethlehem, PA (USA). Sherman Fairchild Lab.

Silicon nitride has been widely used as a pH sensing insulator on the gate of the ion sensitive field effect transistor (ISFET) employed in CMOS integrated chemical sensors. In this paper, the authors report experimental results on the H/sup +/ sensitivity of heavily boron-implanted silicon nitride (Si/sub 3/N/sub 4/). Ion implantation provides a microelectronics technology compatible approach to modify the surface of insulators and tailor the ion sensitivity of ISFETs. This work has suggested new possibilities to study the multiple-site site-binding model for blocking insulators. The composition of the surface sites (nature and number of sites), can be conveniently controlled by implant ion species and dose.

• OSTI ID: 5049948
• Journal Information: Journal of the Electrochemical Society; (USA), Journal Name: Journal of the Electrochemical Society; (USA) Vol. 136:10; ISSN JESOA; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603* -- Materials-- Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
BORON
CHARGED PARTICLES
CHEMICAL COMPOSITION
ELECTRICAL INSULATION
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ELEMENTS
FIELD EFFECT TRANSISTORS
HYDROGEN IONS
INTEGRATED CIRCUITS
ION IMPLANTATION
IONS
MICROELECTRONIC CIRCUITS
MICROELECTRONICS
NITRIDES
NITROGEN COMPOUNDS
PH VALUE
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMIMETALS
SENSITIVITY
SILICON COMPOUNDS
SILICON NITRIDES
TECHNOLOGY ASSESSMENT
TRANSISTORS