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Title: Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

Abstract

Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 10 15 cm –3, 8.4 × 10 16 cm –3, and 8.4 × 10 17 cm –3 using iodine as dopant in DHs. Optical injection at 1 × 10 10 photons/pulse/cm 2 to 3 × 10 11 photons/pulse/cm 2, corresponding to initial injection of photocarriers up to ~8 × 10 15 cm –3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 10 15 cm –3 and 8.4 × 10 16 cm –3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Texas State Univ., San Marcos, TX (United States)
Publication Date:
Research Org.:
Texas State Univ., San Marcos, TX (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1580431
Grant/Contract Number:  
EE0007541; AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 46; Journal Issue: 9; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CdTe; heterostructures; photoluminescence; lifetime

Citation Formats

Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., and Holtz, M. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. United States: N. p., 2017. Web. doi:10.1007/s11664-017-5646-y.
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., & Holtz, M. Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy. United States. doi:10.1007/s11664-017-5646-y.
Sohal, Sandeep, Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Swartz, C. H., LeBlanc, E. G., Myers, T. H., Li, J. V., and Holtz, M. Wed . "Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy". United States. doi:10.1007/s11664-017-5646-y. https://www.osti.gov/servlets/purl/1580431.
@article{osti_1580431,
title = {Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy},
author = {Sohal, Sandeep and Edirisooriya, M. and Ogedengbe, O. S. and Petersen, J. E. and Swartz, C. H. and LeBlanc, E. G. and Myers, T. H. and Li, J. V. and Holtz, M.},
abstractNote = {Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 1015 cm–3, 8.4 × 1016 cm–3, and 8.4 × 1017 cm–3 using iodine as dopant in DHs. Optical injection at 1 × 1010 photons/pulse/cm2 to 3 × 1011 photons/pulse/cm2, corresponding to initial injection of photocarriers up to ~8 × 1015 cm–3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 1015 cm–3 and 8.4 × 1016 cm–3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.},
doi = {10.1007/s11664-017-5646-y},
journal = {Journal of Electronic Materials},
issn = {0361-5235},
number = 9,
volume = 46,
place = {United States},
year = {2017},
month = {6}
}

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