Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

Sohal, Sandeep; Edirisooriya, M.; Ogedengbe, O. S.; Petersen, J. E.; Swartz, C. H.; LeBlanc, E. G.; Myers, T. H.; Li, J. V.; Holtz, M.

doi:10.1007/s11664-017-5646-y

Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

Journal Article · Wed Jun 21 00:00:00 EDT 2017 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-017-5646-y· OSTI ID:1580431

Sohal, Sandeep ^[1]; Edirisooriya, M. ^[2]; Ogedengbe, O. S. ^[2]; Petersen, J. E. ^[2]; Swartz, C. H. ^[2]; LeBlanc, E. G. ^[2]; Myers, T. H. ^[2]; Li, J. V. ^[2]; Holtz, M. ^[2]

Texas State Univ., San Marcos, TX (United States); Texas State University
Texas State Univ., San Marcos, TX (United States)

Iodine-doped CdMgTe/CdSeTe double heterostructures (DHs) have been grown by molecular beam epitaxy and studied using time-resolved photoluminescence (PL), focusing on absorber layer thickness of 2 μm. The n-type free carrier concentration was varied to ~7 × 10¹⁵ cm^–3, 8.4 × 10¹⁶ cm^–3, and 8.4 × 10¹⁷ cm^–3 using iodine as dopant in DHs. Optical injection at 1 × 10¹⁰ photons/pulse/cm² to 3 × 10¹¹ photons/pulse/cm², corresponding to initial injection of photocarriers up to ~8 × 10¹⁵ cm^–3, was applied to examine the effects of excess carrier concentration on the PL lifetimes. Iodine-doped DHs exhibited an initial rapid decay followed by a slower decay at free carrier concentration of 7 × 10¹⁵ cm^–3 and 8.4 × 10¹⁶ cm^–3. The optical injection dependence of the carrier lifetimes for DHs was interpreted based on the Shockley–Read–Hall model. Furthermore, the observed decrease in lifetime with increasing n is consistent with growing importance of radiative recombination.

View Accepted Manuscript (DOE)

Research Organization:: Texas State Univ., San Marcos, TX (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

Grant/Contract Number:: AC36-08GO28308; EE0007541

OSTI ID:: 1580431

Journal Information:: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 9 Vol. 46; ISSN 0361-5235

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

References (16)

CdTe solar cells with open-circuit voltage breaking the 1 V barrier Burst, J. M.; Duenow, J. N.; Albin, D. S. Nature Energy, Vol. 1, Issue 3 https://doi.org/10.1038/nenergy.2016.15	journal	February 2016
Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17% Zhao, Yuan; Boccard, Mathieu; Liu, Shi Nature Energy, Vol. 1, Issue 6 https://doi.org/10.1038/nenergy.2016.67	journal	May 2016
Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers Ahrenkiel, R. K.; Keyes, B. M.; Dunlavy, D. J. Journal of Applied Physics, Vol. 70, Issue 1 https://doi.org/10.1063/1.350315	journal	July 1991
Optical properties of CdTe: Experiment and modeling Adachi, Sadao; Kimura, Toshifumi; Suzuki, Norihiro Journal of Applied Physics, Vol. 74, Issue 5 https://doi.org/10.1063/1.354543	journal	September 1993
Optical enhancement of the open-circuit voltage in high quality GaAs solar cells Steiner, M. A.; Geisz, J. F.; García, I. Journal of Applied Physics, Vol. 113, Issue 12 https://doi.org/10.1063/1.4798267	journal	March 2013
Shockley-Read-Hall lifetimes in CdTe Buurma, C.; Krishnamurthy, S.; Sivananthan, S. Journal of Applied Physics, Vol. 116, Issue 1 https://doi.org/10.1063/1.4886386	journal	July 2014
Radiative and interfacial recombination in CdTe heterostructures Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G. Applied Physics Letters, Vol. 105, Issue 22 https://doi.org/10.1063/1.4902926	journal	December 2014
Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy Zhao, Xin-Hao; DiNezza, Michael J.; Liu, Shi Applied Physics Letters, Vol. 105, Issue 25 https://doi.org/10.1063/1.4904993	journal	December 2014
Theoretical analysis of non-radiative multiphonon recombination activity of intrinsic defects in CdTe Krasikov, D. N.; Scherbinin, A. V.; Knizhnik, A. A. Journal of Applied Physics, Vol. 119, Issue 8 https://doi.org/10.1063/1.4942529	journal	February 2016
Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H. Applied Physics Letters, Vol. 109, Issue 9 https://doi.org/10.1063/1.4961989	journal	August 2016
Nearly ideal electronic properties of sulfide coated GaAs surfaces Yablonovitch, E.; Sandroff, C. J.; Bhat, R. Applied Physics Letters, Vol. 51, Issue 6 https://doi.org/10.1063/1.98415	journal	August 1987
Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S. Journal of Physics D: Applied Physics, Vol. 49, Issue 50 https://doi.org/10.1088/0022-3727/49/50/505104	journal	November 2016
Statistics of the Recombinations of Holes and Electrons Shockley, W.; Read, W. T. Physical Review, Vol. 87, Issue 5 https://doi.org/10.1103/PhysRev.87.835	journal	September 1952
Unusually Low Surface-Recombination Velocity on Silicon and Germanium Surfaces Yablonovitch, E.; Allara, D. L.; Chang, C. C. Physical Review Letters, Vol. 57, Issue 2, p. 249-252 https://doi.org/10.1103/PhysRevLett.57.249	journal	July 1986
Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation Kuciauskas, Darius; Kanevce, Ana; Burst, James M. IEEE Journal of Photovoltaics, Vol. 3, Issue 4 https://doi.org/10.1109/JPHOTOV.2013.2270354	journal	October 2013
Minority-Carrier Lifetime and Surface Recombination Velocity in Single-Crystal CdTe Kuciauskas, Darius; Kanevce, Ana; Dippo, Pat IEEE Journal of Photovoltaics, Vol. 5, Issue 1 https://doi.org/10.1109/JPHOTOV.2014.2359738	journal	January 2015

Cited By (1)

Investigations of the structural, optical properties and electronic structure of CdTe _{1− x} Se _x films fabricated by RF magnetron sputtering Li, Chunxiu; Wang, Ailing; Wu, Lili Materials Research Express, Vol. 6, Issue 6 https://doi.org/10.1088/2053-1591/ab109c	journal	March 2019

Similar Records

Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

Journal Article · Thu Oct 27 20:00:00 EDT 2016 · Journal of Applied Physics · OSTI ID:1333496

Effects of Zinc and Tellurium Doping on Minority Carrier Recombination in Lattice-Matched and Lattice-Mismatched InGaAs/InP Epitaxial Layers and Thermophotovoltaic Cells

Conference · Sat Dec 31 23:00:00 EST 2005 · OSTI ID:944000

Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

Journal Article · Mon Jun 05 20:00:00 EDT 2017 · Journal of Electronic Materials · OSTI ID:1374126

Related Subjects

14 SOLAR ENERGY
CdTe
heterostructures
lifetime
photoluminescence

Carrier Lifetimes of Iodine-Doped CdMgTe/CdSeTe Double Heterostructures Grown by Molecular Beam Epitaxy

Citation Formats

References (16)

Cited By (1)

Similar Records

Related Subjects