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Title: Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures

Abstract

CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 10 16cm -3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.

Authors:
 [1];  [2]; ORCiD logo [1]; ORCiD logo [1];  [1]; ORCiD logo [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [2]
  1. Texas State Univ., San Marcos, TX (United States)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; SunShot Foundational Program to Advance Cell Efficiency II (F-PACE II)
OSTI Identifier:
1333496
Alternate Identifier(s):
OSTI ID: 1420546
Report Number(s):
NREL/JA-5K00-67465
Journal ID: ISSN 0021-8979
Grant/Contract Number:  
AC36-08GO28308; DEAC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 16; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoluminescence; doping; electron capture; II-VI semiconductors; heterojunctions

Citation Formats

Swartz, Craig H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., and Barnes, Teresa M. Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. United States: N. p., 2016. Web. doi:10.1063/1.4966574.
Swartz, Craig H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., & Barnes, Teresa M. Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures. United States. doi:10.1063/1.4966574.
Swartz, Craig H., Zaunbrecher, K. N., Sohal, S., LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Petersen, J. E., Jayathilaka, P. A. R. D., Myers, T. H., Holtz, M. W., and Barnes, Teresa M. Fri . "Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures". United States. doi:10.1063/1.4966574. https://www.osti.gov/servlets/purl/1333496.
@article{osti_1333496,
title = {Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures},
author = {Swartz, Craig H. and Zaunbrecher, K. N. and Sohal, S. and LeBlanc, E. G. and Edirisooriya, M. and Ogedengbe, O. S. and Petersen, J. E. and Jayathilaka, P. A. R. D. and Myers, T. H. and Holtz, M. W. and Barnes, Teresa M.},
abstractNote = {CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction in electron capture cross section appeared at doping densities over 1016cm-3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.},
doi = {10.1063/1.4966574},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 16,
volume = 120,
place = {United States},
year = {2016},
month = {10}
}

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Works referenced in this record:

Spatial uniformity of minority‐carrier lifetime in polycrystalline CdTe solar cells
journal, May 1994

  • Ahrenkiel, R. K.; Keyes, B. M.; Levi, D. L.
  • Applied Physics Letters, Vol. 64, Issue 21
  • DOI: 10.1063/1.111402

Shockley-Read-Hall lifetimes in CdTe
journal, July 2014

  • Buurma, C.; Krishnamurthy, S.; Sivananthan, S.
  • Journal of Applied Physics, Vol. 116, Issue 1
  • DOI: 10.1063/1.4886386

Single-crystal CdTe solar cells with V oc greater than 900 mV
journal, August 2014

  • Duenow, J. N.; Burst, J. M.; Albin, D. S.
  • Applied Physics Letters, Vol. 105, Issue 5
  • DOI: 10.1063/1.4892401

Non-Radiative Carrier Recombination Enhanced by Two-Level Process: A First-Principles Study
journal, February 2016

  • Yang, Ji-Hui; Shi, Lin; Wang, Lin-Wang
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep21712

Solar cell efficiency tables (version 44): Solar cell efficiency tables
journal, June 2014

  • Green, Martin A.; Emery, Keith; Hishikawa, Yoshihiro
  • Progress in Photovoltaics: Research and Applications, Vol. 22, Issue 7
  • DOI: 10.1002/pip.2525

Optical properties of CdTe: Experiment and modeling
journal, September 1993

  • Adachi, Sadao; Kimura, Toshifumi; Suzuki, Norihiro
  • Journal of Applied Physics, Vol. 74, Issue 5
  • DOI: 10.1063/1.354543

Optical properties of undoped and iodine-doped CdTe
journal, May 1995

  • Giles, N. C.; Lee, Jaesun; Myers, T. H.
  • Journal of Electronic Materials, Vol. 24, Issue 5
  • DOI: 10.1007/BF02657980

Efficiency limitations for wide-band-gap chalcopyrite solar cells
journal, June 2005


Formation of DX-centers in indium doped CdTe
journal, June 2007


Optical measurement system for characterizing compound semiconductor interface and surface states
journal, January 1998

  • Passlack, M.; Legge, R. N.; Convey, D.
  • IEEE Transactions on Instrumentation and Measurement, Vol. 47, Issue 5
  • DOI: 10.1109/19.746611

Photon-Radiative Recombination of Electrons and Holes in Germanium
journal, June 1954


Deep level defects in CdTe materials studied by thermoelectric effect spectroscopy and photo-induced current transient spectroscopy
journal, March 2007


Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy
journal, November 2013

  • DiNezza, Michael J.; Zhao, Xin-Hao; Liu, Shi
  • Applied Physics Letters, Vol. 103, Issue 19
  • DOI: 10.1063/1.4828984

Electrodeposited CdTe—optical properties
journal, June 1997

  • Rakhshani, A. E.
  • Journal of Applied Physics, Vol. 81, Issue 12
  • DOI: 10.1063/1.365402

Theoretical analysis of non-radiative multiphonon recombination activity of intrinsic defects in CdTe
journal, February 2016

  • Krasikov, D. N.; Scherbinin, A. V.; Knizhnik, A. A.
  • Journal of Applied Physics, Vol. 119, Issue 8
  • DOI: 10.1063/1.4942529

Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as Seen via Microphotoluminescence
journal, September 2014


Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

  • Metzger, W. K.; Albin, D.; Levi, D.
  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Intensity‐dependent minority‐carrier lifetime in III‐V semiconductors due to saturation of recombination centers
journal, July 1991

  • Ahrenkiel, R. K.; Keyes, B. M.; Dunlavy, D. J.
  • Journal of Applied Physics, Vol. 70, Issue 1
  • DOI: 10.1063/1.350315

Capture of carriers by screened charged centres and low-temperature shallow-impurity electric field breakdown in semiconductors
journal, September 1998


Radiative and interfacial recombination in CdTe heterostructures
journal, December 2014

  • Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G.
  • Applied Physics Letters, Vol. 105, Issue 22
  • DOI: 10.1063/1.4902926

Ellipsometric studies of Cd1−xMgxTe (0 x 0.5) alloys
journal, July 1997

  • Choi, S. G.; Kim, Y. D.; Yoo, S. D.
  • Applied Physics Letters, Vol. 71, Issue 2
  • DOI: 10.1063/1.119511

Electrical contacts for II–VI semiconducting devices
journal, November 2009


Band structure measurement and analysis of the Bi 2 Te 3 /CdTe (111) B heterojunction
journal, May 2015

  • Lee, Kyoung-Keun; Myers, Thomas H.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 3
  • DOI: 10.1116/1.4914175

CdTe solar cells with open-circuit voltage breaking the 1 V barrier
journal, February 2016


Point defects: Their influence on electron trapping, resistivity, and electron mobility-lifetime product in CdTe x Se 1−x detectors
journal, January 2016

  • Gul, R.; Roy, U. N.; Egarievwe, S. U.
  • Journal of Applied Physics, Vol. 119, Issue 2
  • DOI: 10.1063/1.4939647

Research strategies toward improving thin-film CdTe photovoltaic devices beyond 20% conversion efficiency
journal, December 2013


Two dimensional numerical simulations of carrier dynamics during time-resolved photoluminescence decays in two-photon microscopy measurements in semiconductors
journal, July 2015

  • Kanevce, Ana; Kuciauskas, Darius; Levi, Dean H.
  • Journal of Applied Physics, Vol. 118, Issue 4
  • DOI: 10.1063/1.4927299

Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
journal, December 2014

  • Zhao, Xin-Hao; DiNezza, Michael J.; Liu, Shi
  • Applied Physics Letters, Vol. 105, Issue 25
  • DOI: 10.1063/1.4904993

Design of Epitaxial CdTe Solar Cells on InSb Substrates
journal, November 2015


Analysis of charge separation dynamics in a semiconductor junction
journal, January 2005


Theoretical study of time-resolved luminescence in semiconductors. III. Trap states in the band gap
journal, September 2015

  • Maiberg, Matthias; Hölscher, Torsten; Zahedi-Azad, Setareh
  • Journal of Applied Physics, Vol. 118, Issue 10
  • DOI: 10.1063/1.4929877

Photoluminescence of CdTe crystals grown by physical-vapor transport
journal, July 2003


Optical enhancement of the open-circuit voltage in high quality GaAs solar cells
journal, March 2013

  • Steiner, M. A.; Geisz, J. F.; García, I.
  • Journal of Applied Physics, Vol. 113, Issue 12
  • DOI: 10.1063/1.4798267

    Works referencing / citing this record:

    Radiative Efficiency and Charge‐Carrier Lifetimes and Diffusion Length in Polycrystalline CdSeTe Heterostructures
    journal, December 2019

    • Kuciauskas, Darius; Moseley, John; Ščajev, Patrik
    • physica status solidi (RRL) – Rapid Research Letters, Vol. 14, Issue 3
    • DOI: 10.1002/pssr.201900606