Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

Ogedengbe, O. S.; Swartz, C. H.; Jayathilaka, P. A. R. D.; Petersen, J. E.; Sohal, S.; LeBlanc, E. G.; Edirisooriya, M.; Zaunbrecher, K. N.; Wang, A.; Barnes, T. M.; Myers, T. H.

doi:10.1007/s11664-017-5588-4

Iodine Doping of CdTe and CdMgTe for Photovoltaic Applications

Journal Article · Tue Jun 06 00:00:00 EDT 2017 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-017-5588-4· OSTI ID:1374126

Ogedengbe, O. S. ^[1]; Swartz, C. H. ^[1]; Jayathilaka, P. A. R. D. ^[1]; Petersen, J. E. ^[1]; Sohal, S. ^[1]; LeBlanc, E. G. ^[1]; Edirisooriya, M. ^[1]; Zaunbrecher, K. N. ^[2]; Wang, A. ^[3]; Barnes, T. M. ^[2]; Myers, T. H. ^[1]

Texas State Univ., San Marcos, TX (United States)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
EAG Laboratories, Sunnyvale, CA (United States)

Here, iodine-doped CdTe and Cd_1-xMg_xTe layers were grown by molecular beam epitaxy. Secondary ion mass spectrometry characterization was used to measure dopant concentration, while Hall measurement was used for determining carrier concentration. Photoluminescence intensity and time-resolved photoluminescence techniques were used for optical characterization. Maximum n-type carrier concentrations of 7.4 x 10¹⁸ cm^-3 for CdTe and 3 x 10¹⁷ cm^-3 for Cd_0.65Mg_0.35Te were achieved. Studies suggest that electrically active doping with iodine is limited with dopant concentration much above these values. Dopant activation of about 80% was observed in most of the CdTe samples. The estimated activation energy is about 6 meV for CdTe and the value for Cd_0.65Mg_0.35Te is about 58 meV. Iodine-doped samples exhibit long lifetimes with no evidence of photoluminescence degradation with doping as high as 2 x 10¹⁸ cm^-3, while indium shows substantial non-radiative recombination at carrier concentrations above 5 x 10¹⁶ cm^-3. Iodine was shown to be thermally stable in CdTe at temperatures up to 600 °C. Results suggest iodine may be a preferred n-type dopant compared to indium in achieving heavily doped n-type CdTe.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1374126

Report Number(s):: NREL/JA--5K00-68892

Journal Information:: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 9 Vol. 46; ISSN 0361-5235

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

References (23)

Chalcogenide Photovoltaics Scheer, Roland; Schock, Hans-Werner Wiley‐VCH Verlag GmbH & Co https://doi.org/10.1002/9783527633708	book	January 2011
Issue Information No authors listed Progress in Photovoltaics: Research and Applications, Vol. 24, Issue 1, p. 1-1 https://doi.org/10.1002/pip.2669	journal	December 2015
Growth of fully doped Hg1−xCdxTe heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures Maxey, C. D.; Jones, C. L.; Metcalfe, N. E. Journal of Electronic Materials, Vol. 25, Issue 8 https://doi.org/10.1007/BF02655020	journal	August 1996
Optical properties of undoped and iodine-doped CdTe Giles, N. C.; Lee, Jaesun; Myers, T. H. Journal of Electronic Materials, Vol. 24, Issue 5 https://doi.org/10.1007/BF02657980	journal	May 1995
Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates Maxey, C. D.; Camplin, J. P.; Guilfoy, I. T. Journal of Electronic Materials, Vol. 32, Issue 7 https://doi.org/10.1007/s11664-003-0048-8	journal	July 2003
Molecular beam epitaxy of iodine-doped CdTe and (CdMg) Te Fischer, F.; Waag, A.; Bilger, G. Journal of Crystal Growth, Vol. 141, Issue 1-2 https://doi.org/10.1016/0022-0248(94)90097-3	journal	August 1994
Halogen doping of II–VI semiconductors during molecular beam epitaxy Waag, A.; Litz, Th.; Fischer, F. Journal of Crystal Growth, Vol. 138, Issue 1-4 https://doi.org/10.1016/0022-0248(94)90847-8	journal	April 1994
The effect of impurities on the doping and VOC of CdTe/CdS thin film solar cells Zhao, H.; Farah, Alvi; Morel, D. Thin Solid Films, Vol. 517, Issue 7 https://doi.org/10.1016/j.tsf.2008.11.041	journal	February 2009
CdTe solar cells with open-circuit voltage breaking the 1 V barrier Burst, J. M.; Duenow, J. N.; Albin, D. S. Nature Energy, Vol. 1, Issue 3 https://doi.org/10.1038/nenergy.2016.15	journal	February 2016
Monocrystalline CdTe solar cells with open-circuit voltage over 1 V and efficiency of 17% Zhao, Yuan; Boccard, Mathieu; Liu, Shi Nature Energy, Vol. 1, Issue 6 https://doi.org/10.1038/nenergy.2016.67	journal	May 2016
Iodine doping in mercury cadmium telluride (Hg _{1− x} Cd _x Te) grown by direct alloy growth using metalorganic chemical vapor deposition Murakami, S.; Okamoto, T.; Maruyama, K. Applied Physics Letters, Vol. 63, Issue 7 https://doi.org/10.1063/1.109895	journal	August 1993
Donor doping of (211) CdTe epilayers and CdTe/CdZnTe piezoelectric heterostructures by molecular beam epitaxy Bassani, F.; Tatarenko, S.; Kheng, K. Applied Physics Letters, Vol. 63, Issue 15, p. 2106-2108 https://doi.org/10.1063/1.110554	journal	October 1993
Iodine doping of CdTe and CdZnTe layers grown by molecular beam epitaxy Brun‐Le‐Cunff, D.; Baron, T.; Daudin, B. Applied Physics Letters, Vol. 67, Issue 7 https://doi.org/10.1063/1.114710	journal	August 1995
Electrodeposited CdTe—optical properties Rakhshani, A. E. Journal of Applied Physics, Vol. 81, Issue 12 https://doi.org/10.1063/1.365402	journal	June 1997
Radiative and interfacial recombination in CdTe heterostructures Swartz, C. H.; Edirisooriya, M.; LeBlanc, E. G. Applied Physics Letters, Vol. 105, Issue 22 https://doi.org/10.1063/1.4902926	journal	December 2014
Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy Zhao, Xin-Hao; DiNezza, Michael J.; Liu, Shi Applied Physics Letters, Vol. 105, Issue 25 https://doi.org/10.1063/1.4904993	journal	December 2014
Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy Zaunbrecher, Katherine N.; Kuciauskas, Darius; Swartz, Craig H. Applied Physics Letters, Vol. 109, Issue 9 https://doi.org/10.1063/1.4961989	journal	August 2016
Factors influencing photoluminescence and photocarrier lifetime in CdSeTe/CdMgTe double heterostructures Swartz, C. H.; Zaunbrecher, K. N.; Sohal, S. Journal of Applied Physics, Vol. 120, Issue 16 https://doi.org/10.1063/1.4966574	journal	October 2016
Growth of high mobility n ‐type CdTe by photoassisted molecular beam epitaxy Bicknell, R. N.; Giles, N. C.; Schetzina, J. F. Applied Physics Letters, Vol. 49, Issue 17 https://doi.org/10.1063/1.97432	journal	October 1986
Effect of free-carrier concentration and optical injection on carrier lifetimes in undoped and iodine doped CdMgTe/CdSeTe double heterostructures grown by molecular beam epitaxy Sohal, S.; Edirisooriya, M.; Ogedengbe, O. S. Journal of Physics D: Applied Physics, Vol. 49, Issue 50 https://doi.org/10.1088/0022-3727/49/50/505104	journal	November 2016
Photon-Radiative Recombination of Electrons and Holes in Germanium van Roosbroeck, W.; Shockley, W. Physical Review, Vol. 94, Issue 6 https://doi.org/10.1103/PhysRev.94.1558	journal	June 1954
Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg0.46Cd0.54Te Double Heterostructures Zhao, Xin-Hao; Liu, Shi; Zhao, Yuan IEEE Journal of Photovoltaics, Vol. 6, Issue 2 https://doi.org/10.1109/JPHOTOV.2016.2514742	journal	March 2016
Monocrystalline CdTe/MgCdTe double-heterostructure solar cells with a ZnTe hole-contact and passivation layer Becker, Jacob J.; Campbell, Calli M.; Zhao, Yuan 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) https://doi.org/10.1109/PVSC.2016.7749850	conference	June 2016

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