The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

Journal Article · Tue May 07 00:00:00 EDT 2019 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.2019.2910493· OSTI ID:1577096

Khachatrian, A. ^[1]; Buchner, S. ^[1]; Koehler, A. ^[1]; Affouda, C. ^[1]; McMorrow, D. ^[1]; LaLumondiere, S. D. ^[2]; Dillingham, E. C. ^[2]; Bonsall, J. P. ^[2]; Scofield, A. C. ^[2]; Brewe, D. L. ^[3]

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1. U.S. Naval Research Lab., Washington, D.C. (United States)
2. The Aerospace Corp., El Segundo, CA (United States)
3. Argonne National Lab. (ANL), Lemont, IL (United States)

A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. Furthermore, for the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: Office of Naval Research; USDOE
• Grant/Contract Number: AC02-06CH11357
• OSTI ID: 1577096
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 7 Vol. 66; ISSN 0018-9499
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
GaN
HEMT
X-rays
charge generation
gate-connected field plate
single-event transients (SETs)
single-photon absorption