Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

GaAs x-ray detectors with sub-nanosecond temporal response

Journal Article · · Review of Scientific Instruments
DOI:https://doi.org/10.1063/1.5127294· OSTI ID:1574066

Fast semiconductor radiation detectors operated in current mode provide a valuable diagnostic in pulsed power applications. Si detectors are common due to the availability of high-quality materials and mature fabrication processes, but they offer low absorption for hard x-rays above ∼10 keV. GaAs can provide increased hard x-ray absorption for the same detector volume due to a higher atomic number. GaAs photodiodes have been produced from epitaxial material grown at Sandia National Laboratories and fabricated at Sandia’s microfabrication facility. These detectors have significantly higher hard x-ray absorption (>10× at 15 keV) and nearly identical temporal impulse response to similarly sized Si detectors of 0.5 ns full-width half maximum.

Sponsoring Organization:
USDOE
OSTI ID:
1574066
Journal Information:
Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 11 Vol. 90; ISSN 0034-6748
Publisher:
American Institute of PhysicsCopyright Statement
Country of Publication:
United States
Language:
English

References (20)

X-Ray Interactions: Photoabsorption, Scattering, Transmission, and Reflection at E = 50-30,000 eV, Z = 1-92 journal July 1993
Accurate determination of the ionization energy in semiconductor detectors journal February 1968
Digital techniques for real-time pulse shaping in radiation measurements
  • Jordanov, Valentin T.; Knoll, Glenn F.; Huber, Alan C.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 353, Issue 1-3 https://doi.org/10.1016/0168-9002(94)91652-7
journal December 1994
Relative X-ray transition probabilities to the K-shell journal March 1970
Characterization of gallium arsenide X-ray mesa p-i-n photodiodes at room temperature
  • Lioliou, G.; Meng, X.; Ng, J. S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 813 https://doi.org/10.1016/j.nima.2015.12.030
journal March 2016
Gallium Arsenide detectors for X-ray and electron (beta particle) spectroscopy journal November 2016
Superlattice-enhanced silicon soft X-ray and charged particle detectors with nanosecond time response
  • Looker, Q.; Aguirre, B. A.; Hoenk, M. E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 916 https://doi.org/10.1016/j.nima.2018.11.052
journal February 2019
30 μ m  thick GaAs X-ray p + -i-n + photodiode grown by MBE
  • Lioliou, G.; Poyser, C. L.; Butera, S.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 946 https://doi.org/10.1016/j.nima.2019.162670
journal December 2019
Review of the Shockley–Ramo theorem and its application in semiconductor gamma-ray detectors journal May 2001
GaAs radiation imaging detectors with an active layer thickness up to 1mm
  • Tyazhev, A. V.; Budnitsky, D. L.; Koretskay, O. B.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 509, Issue 1-3 https://doi.org/10.1016/s0168-9002(03)01545-6
journal August 2003
Electron-hole pair generation energy in gallium arsenide by x and γ photons journal August 2002
Measurements of 4–10 keV x-ray production with the Z-Beamlet laser journal March 2003
Temperature Dependence of Hole Velocity in p ‐GaAs journal June 1971
Semiconducting and other major properties of gallium arsenide journal October 1982
K-shell emission trends from 60 to 130 cm/ μ s stainless steel implosions journal October 2013
Signatures of hot electrons and fluorescence in Mo Kα emission on Z journal March 2014
Contrasting physics in wire array z pinch sources of 1-20 keV emission on the Z facility journal May 2014
Experimental Demonstration of Fusion-Relevant Conditions in Magnetized Liner Inertial Fusion journal October 2014
K α 1 , 2 and K β 1 , 3 x-ray emission lines of the 3 d transition metals journal December 1997
A Renewed Capability for Gas Puff Science on Sandia's Z Machine journal May 2014

Similar Records

High power density soft x-ray GaAs photodiodes with tailored spectral response
Journal Article · Wed Jul 13 00:00:00 EDT 2022 · Semiconductor Science and Technology · OSTI ID:1889176

X-ray response of GaAlAs/GaAs radiation hardened double: Heterostructure photodiode compared to Si:PIN photodiodes
Conference · Thu Dec 31 23:00:00 EST 1987 · OSTI ID:5302783

X-ray response of AlGaAs/GaAs radiation-hardened double-heterostructure photodiode compared to Si:p-i-n photodiodes
Journal Article · Mon Aug 01 00:00:00 EDT 1988 · Rev. Sci. Instrum.; (United States) · OSTI ID:7123487

Related Subjects