High power density soft x-ray GaAs photodiodes with tailored spectral response

Donetski, Dmitri; Kucharczyk, Kevin; Liu, Jinghe; Lutchman, Ricardo; Hulbert, Steven; Mazzoli, Claudio; Nelson, Christie; Podobedov, Boris

doi:10.1088/1361-6641/ac7c88

High power density soft x-ray GaAs photodiodes with tailored spectral response

Journal Article · Wed Jul 13 04:00:00 EDT 2022 · Semiconductor Science and Technology

DOI:https://doi.org/10.1088/1361-6641/ac7c88· OSTI ID:1889176

^[1]; Kucharczyk, Kevin ^[1]; Liu, Jinghe ^[1]; Lutchman, Ricardo ^[1]; Hulbert, Steven ^[2]; Mazzoli, Claudio ^[2]; Nelson, Christie ^[2]; ^[2]

Stony Brook University, NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W mm^-2, mainly coming from hard x-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy x-ray photons absorbed near the detector surface. The p–n junction structures were grown by molecular beam epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard x-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source II. The responsivity was measured to be 0.16 A W^-1 at 0.7 keV and 0.05 A W^-1at 6 keV in agreement with modeling. At higher x-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

View Accepted Manuscript (DOE)

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0012704

OSTI ID:: 1889176

Report Number(s):: BNL-223438-2022-JAAM

Journal Information:: Semiconductor Science and Technology, Journal Name: Semiconductor Science and Technology Journal Issue: 8 Vol. 37; ISSN 0268-1242

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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