Low-loss single-photon NbN microwave resonators on Si.

Carter, Faustin W.; Khaire, Trupti; Chang, Clarence; Novosad, Valentyn

doi:10.1063/1.5115276

Low-loss single-photon NbN microwave resonators on Si.

Journal Article · Mon Aug 26 04:00:00 EDT 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5115276· OSTI ID:1572477

Carter, Faustin W.; Khaire, Trupti; Chang, Clarence; Novosad, Valentyn

We present coplanar waveguide (CPW) microwave resonators with exceptionally low loss produced from NbN sputtered on Si. The NbN films are deposited with a modest RF substrate bias during reactive DC magnetron sputtering at a substrate temperature of 250 degrees C and can achieve a critical temperature as high as 15 K depending on the N-2 flow rate. We measure the internal quality factors (Q(i)) of two such resonators at high-powers near saturation and report high-power quality factors in excess of 1.2 x 10(6) at 200 mK and 3.5 x 10(5) at 2 K. We also measure the temperature-dependent frequency shift at high power levels and the quality factor at single-photon power levels. From these measurements, we find a low-power (average photon number less than one) Q(i) value of 4.2 x 10(5) at 200 mK, which is consistent with a system limited by two-level-system loss.

Research Organization:: Argonne National Laboratory (ANL)

Sponsoring Organization:: USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division

DOE Contract Number:: AC02-06CH11357

OSTI ID:: 1572477

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 115; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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