Microwave Doppler Charge Velocimetry for Narrow and Wide Bandgap Semiconductors
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Characterization of vertical transport in semiconductor heterostructures is extremely difficult and often impractical. Measurements that are relatively straight forward in lateral transport using Hall methods, such as quantifying carrier density or mobility, have no analog in conventional vertical devices. Doppler charge velocimetry may provide an alternative approach to obtaining transport information. We hypothesize that we can drive vertical currents in structures like heterojunction bipolar transistors or nBn detectors, illuminate them with microwaves, and directly measure the carrier velocities through Doppler shifts imparted on the reflected microwave signal. Some challenges involve providing optical injection and working in the vertical geometry required to extract the desired information. While progress was made to this end, experiments have not yet proved successful. Implications for infrared material characterization are summarized at the end of this document.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1571719
- Report Number(s):
- SAND--2019-12671; 680580
- Country of Publication:
- United States
- Language:
- English
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