Fundamental Science of Doping and Defects in Ga2O3 for Next Generation Power Semiconductors
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
The aim and scope of this project was the development of a capability to prepare high-quality, epitaxial beta gallium oxide films by oxide reactive molecular-beam epitaxy. The purpose was to demonstrate that beta gallium oxide could be grown by such a method using Sandia’s existing oxide molecular-beam epitaxy instrument. The key activity in this project was the installation of a gallium oxide capability on the Sandia instrument. This required the acquisition of several custom items for the instrument, including: a gallium effusion cell, appropriate cell power supplies and temperature controllers, a shutter to block beam flux, installation of an existing ozone generator with a directed gas nozzle and controlled leak valve, and re-routing the chilled water system to accommodate the cell. In addition, beta gallium oxide single crystals were acquired and their surfaces characterized by reflection high energy electron diffraction.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA); USDOE Laboratory Directed Research and Development (LDRD) Program
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1563071
- Report Number(s):
- SAND--2016-10379R; 648323
- Country of Publication:
- United States
- Language:
- English
Similar Records
Accurate multiple-quantum-well growth using real-time optical flux monitoring
Real-time control of molecular beam epitaxy by optical-based flux monitoring