Real-time control of molecular beam epitaxy by optical-based flux monitoring

Journal Article · Mon Dec 06 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110788· OSTI ID:5661053

Chalmers, S A; Killeen, K P ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We have developed a real-time molecular beam epitaxy control system based on Al and Ga atomic beam resonant absorption of hollow cathode lamp emission. By continuously monitoring the absorption of Al and Ga beams during growth, this system accurately determines instantaneous growth rates and then integrates these over time to determine layer thickness. This information is used in real time for effusion cell shutter (and hence layer thickness) control. The accuracy and flexibility of this system is demonstrated here by growing AlAs/GaAs distributed Bragg reflectors with consistent layer thicknesses even though effusion cell temperatures were intentionally varied. In each instance the system automatically detected and compensated for the different growth rates, resulting in DBRs with center wavelengths controlled to within 0.3% of the target wavelength.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5661053
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:23; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ABSORPTION SPECTRA
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BRAGG REFLECTION
CONTROL
DIMENSIONS
EPITAXY
FLUORESCENCE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
MONITORING
PNICTIDES
REAL TIME SYSTEMS
REFLECTION
SPECTRA
THICKNESS