A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

Journal Article · Fri Dec 21 00:00:00 EST 2018 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/TPEL.2018.2889263· OSTI ID:1557400

Perez, Sonia ^[1]; Kotecha, Ramchandra M  ^[2]; Rashid, Arman Ur ^[3]; Hossain, Md Maksudul ^[3]; Vrotsos, Tom ^[3]; Francis, Anthony Matthew ^[1]; Mantooth, Homer Alan ^[3]; Santi, Enrico ^[4]; Hudgins, Jerry L. ^[5]

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1. Ozark Integrated Circuits
2. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
3. University of Arkansas
4. University of South Carolina
5. University of Nebraska, Lincoln

This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n- and p-channel devices. The model can predict the detailed switching waveforms of these technologies based on its charge-based formulation. Further, this compact IGBT model is presented alongside a unique datasheet-driven parameter extraction process. The parameter extraction process enables users to quickly extract model parameters from data typically published without the need of taking physical measurements. The model has been validated with both Si and SiC devices for static and dynamic characteristics. The SiC IGBTs used for validation are a 12.5-kV n-channel device and a 13-kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS Corp. (Milpitas, CA, USA). This is the only IGBT model that predicts the performance of both n- and p-channel, Si and SiC devices, providing more freedom for the development of complex power electronics circuit designs. The convergence of the model has been verified by implementing a complex circuit consisting of both a dc-dc converter and a dc-ac inverter. The results presented here show that the unified model can be used to describe the behavior of a wide range of Si and SiC IGBT circuits. This paper is accompanied by a Verilog-A source code and a power point file demonstrating the model parameter extraction sequence.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC36-08GO28308
• OSTI ID: 1557400
• Report Number(s): NREL/JA-5400-74559
• Journal Information: IEEE Transactions on Power Electronics, Vol. 34, Issue 9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
compact model
datasheet driven model
device modeling
insulated gate bipolar transistor (IGBT)
power switching devices
silicon carbide (SiC)