Datasheet driven silicon carbide power MOSFET model

Journal Article · Fri Jan 10 04:00:00 EST 2014 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/TPEL.2013.2295774· OSTI ID:1133544

Mudholkar, Mihir ^[1]; Ahmed, Shamin ^[2]; Ericson, Milton Nance ^[3]; Frank, Steven Shane ^[3]; Britton Jr., Charles L. ^[3]; Mantooth, H. Alan ^[2]

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1. Standard Products Group, Pheonix, AZ (United States)
2. Univ. of Arkansas, Fayetteville, AR (United States)
3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25 degrees C to 225 degrees C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1133544
• Journal Information: IEEE Transactions on Power Electronics, Journal Name: IEEE Transactions on Power Electronics Journal Issue: 5 Vol. 29; ISSN 0885-8993
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
36 MATERIALS SCIENCE
SiC
modeling
power MOSFET