Datasheet Driven Silicon Carbide Power MOSFET Model

Journal Article · Thu May 01 00:00:00 EDT 2014 · IEEE Transactions on Power Electronics

DOI:https://doi.org/10.1109/tpel.2013.2295774· OSTI ID:1136644

Mudholkar, Mihir; Ahmed, Shamim; Ericson, M. Nance; Frank, S. Shane; Britton, Charles L.; Mantooth, H. Alan

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching characteristics with measured data from a 1200-V, 20-A SiC power MOSFET in a temperature range of 25°C to 225°C. The peculiar variation of on-state resistance with temperature for SiC power MOSFETs has also been demonstrated through measurements and accounted for in the developed model. In order to improve the user experience with the model, a new datasheet driven parameter extraction strategy has been presented which requires only data available in device datasheets, to enable quick parameter extraction for off-the-shelf devices. Excellent agreement is shown between measurement and simulation using the presented model over the entire temperature range.

• Research Organization: Arkansas Power Electronics International (APEI), Inc., Fayetteville, AR (United States)
• Sponsoring Organization: USDOE
• Contributing Organization: Oak Ridge National Laboratory; University of Arkansas
• DOE Contract Number: AR0000111
• OSTI ID: 1136644
• Report Number(s): DOE-APEI-01111-8
• Journal Information: IEEE Transactions on Power Electronics, Vol. 29, Issue 5; ISSN 0885-8993
• Publisher: IEEE
• Country of Publication: United States
• Language: English