Characterization and Comparison of Trench and Planar Silicon Carbide (SiC) MOSFET at Different Temperatures

Conference · Fri Jun 01 00:00:00 EDT 2018

DOI:https://doi.org/10.1109/ITEC.2018.8450223· OSTI ID:1470888

Anwar, Saeed ^[1]; Wang, Zhiqiang ^[1]; Chinthavali, Madhu Sudhan ^[1]

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1. ORNL

In this paper, the static and dynamic characteristics of discrete 650 V and 1200 V trench TO 247 SiC MOSFET is evaluated and compared with a similar current rating 1200 V planar gate discrete TO 247 SiC MOSFET. The new trench MOSFET has promising application for vehicle charging and auxiliary power supply application due to the lower on-state resistance and lower capacitance. Static characteristics for these devices are evaluated using a curve tracer for different device junction temperature A common double pulse test (DPT) platform is developed to evaluate the switching loss at different device junction temperature ranging from 25°C to 175°C. The experimental setup and results are presented for different load currents and temperature.

• Research Organization: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE; USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1470888
• Country of Publication: United States
• Language: English