Characterization and Comparison of Planar and Trench Silicon Carbide (SiC) Power MOSFETs
- ORNL
This paper presents a comprehensive evaluation and experimental comparison of silicon carbide power MOSFETs through double pulse test. First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type) are evaluated under different case temperatures from 25 oC to 175 oC. Based on the evaluation data, a comparison of both SiC MOSFETs is conducted in terms of their on-state resistance, switching loss, and temperature dependent behavior. It is found that the latest trench SiC MOSFETs present similar switching loss while much lower conduction loss compared to existing commercial planar SiC MOSFETs. Moreover, the trench devices show a nearly temperature independent switching loss, which is beneficial to suppress the potential thermal runaway issue under high temperature continuous operation.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). National Transportation Research Center (NTRC); Power Electronics and Electric Machinery Research Facility
- Sponsoring Organization:
- EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1342668
- Country of Publication:
- United States
- Language:
- English
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