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Title: Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study

Abstract

Not provided.

Authors:
; ORCiD logo; ; ; ; ; ORCiD logo
Publication Date:
Research Org.:
Rensselaer Polytechnic Inst., Troy, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1541521
DOE Contract Number:  
SC0002623
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Nanotechnology
Additional Journal Information:
Journal Volume: 17; Journal Issue: 1; Journal ID: ISSN 1536-125X
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
Engineering; Science & Technology - Other Topics; Materials Science; Physics

Citation Formats

Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Xie, Sheng-Yi, Tian, Wei Quan, Zhang, Shengbai, and Sun, Hong-Bo. Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study. United States: N. p., 2018. Web. doi:10.1109/tnano.2017.2779579.
Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Xie, Sheng-Yi, Tian, Wei Quan, Zhang, Shengbai, & Sun, Hong-Bo. Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study. United States. doi:10.1109/tnano.2017.2779579.
Chen, Nian-Ke, Li, Xian-Bin, Wang, Xue-Peng, Xie, Sheng-Yi, Tian, Wei Quan, Zhang, Shengbai, and Sun, Hong-Bo. Mon . "Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study". United States. doi:10.1109/tnano.2017.2779579.
@article{osti_1541521,
title = {Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study},
author = {Chen, Nian-Ke and Li, Xian-Bin and Wang, Xue-Peng and Xie, Sheng-Yi and Tian, Wei Quan and Zhang, Shengbai and Sun, Hong-Bo},
abstractNote = {Not provided.},
doi = {10.1109/tnano.2017.2779579},
journal = {IEEE Transactions on Nanotechnology},
issn = {1536-125X},
number = 1,
volume = 17,
place = {United States},
year = {2018},
month = {1}
}