Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study
Journal Article
·
· IEEE Transactions on Nanotechnology
Not provided.
- Research Organization:
- Rensselaer Polytechnic Inst., Troy, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- SC0002623
- OSTI ID:
- 1541521
- Journal Information:
- IEEE Transactions on Nanotechnology, Vol. 17, Issue 1; ISSN 1536-125X
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x
Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy
Electronic fingerprints of Cr and V dopants in the topological insulatorSb 2 Te 3
Journal Article
·
Mon Nov 09 00:00:00 EST 2020
· Applied Physics Letters
·
OSTI ID:1541521
+1 more
Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy
Journal Article
·
Mon Jan 01 00:00:00 EST 2018
· Acta Materialia
·
OSTI ID:1541521
+3 more
Electronic fingerprints of Cr and V dopants in the topological insulator
Journal Article
·
Fri Sep 28 00:00:00 EDT 2018
· Physical Review. B
·
OSTI ID:1541521
+6 more