Metal-insulator transition and doping-induced phase change in Ge2Sb2Se5xTe5-5x

Xu, Zhenyang; Park, Keeseong; Schneeloch, John A.; Louca, Despina

doi:10.1063/5.0030956

Title: Metal-insulator transition and doping-induced phase change in Ge₂Sb₂Se_5xTe_5-5x

Journal Article · Mon Nov 09 00:00:00 EST 2020 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0030956· OSTI ID:1849393

^[1]; Park, Keeseong ^[2];

^[1];

^[1]

University of Virginia, Charlottesville, VA (United States). Dept. of Physics
Department of Emerging Materials Science, DGIST, Daegu (South Korea)

Ge₂Sb₂Te₅ (GST-225), a phase change material (PCM) with vast differences in the electrical and optical characteristics between its amorphous and crystalline phases, is revisited to explore its properties with Se doping. GST crystallizes in a layered hexagonal ground state, while the precursor to the amorphous state is a distorted rock salt like structure with vacancies at the Ge/Sb sites. Upon doping, liquid nitrogen quenched Ge₂Sb₂Se_5xTe_5-5x (GSST-225) exhibits a direct hexagonal-to-amorphous phase change above x > 0.8, whereas the rock salt like structure appears as a second phase with a volume fraction that does not change as a function of the doping. The phase change is accompanied by a metal-to-insulator transition (MIT), with a several orders of magnitude increase in the resistivity on approaching the amorphous state. Additionally, a similar MIT is observed even without the phase change in hexagonal crystals with doping levels above x >0.8. On warming amorphous GSST (x = 0.9) above room temperature, a reversal to the hexagonal phase occurs with a re-crystallization onset temperature (T_c) above 300 °C, much higher than the T_c (~170 °C) of amorphous GST and an activation energy of 1.47 eV, which is comparable to good glass formers.

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Research Organization:: Univ. of Virginia, Charlottesville, VA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: FG02-01ER45927

OSTI ID:: 1849393

Alternate ID(s):: OSTI ID: 1712506

Journal Information:: Applied Physics Letters, Vol. 117, Issue 19; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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