Electronic fingerprints of Cr and V dopants in the topological insulator Sb2Te3

Zhang, Wenhan; West, Damien; Lee, Seng Huat; Qiu, Yunsheng; Chang, Cui-Zu; Moodera, Jagadeesh S.; Hor, Yew San; Zhang, Shengbai; Wu, Weida

doi:10.1103/physrevb.98.115165

Electronic fingerprints of Cr and V dopants in the topological insulator Sb2 Te3

Journal Article · Fri Sep 28 00:00:00 EDT 2018 · Physical Review. B

DOI:https://doi.org/10.1103/physrevb.98.115165· OSTI ID:1540969

Zhang, Wenhan ^[1]; West, Damien ^[2]; Lee, Seng Huat ^[3]; Qiu, Yunsheng ^[4]; Chang, Cui-Zu ^[5]; Moodera, Jagadeesh S. ^[6]; Hor, Yew San ^[4]; Zhang, Shengbai ^[2]; Wu, Weida ^[7]

Rutgers University, Piscataway, NJ (United States); DOE/OSTI
Rensselaer Polytechnic Institute, Troy, NY (United States)
Missouri University of Science and Technology, Rolla, MO (United States); Pennsylvania State University, University Park, PA (United States)
Missouri University of Science and Technology, Rolla, MO (United States)
Pennsylvania State University, University Park, PA (United States); Massachusetts Institute of Technology (MIT), Cambridge, MA (United States)
Massachusetts Institute of Technology (MIT), Cambridge, MA (United States)
Rutgers University, Piscataway, NJ (United States)

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb₂Te₃. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the codoped magnetic TI samples with the enhanced quantum anomalous Hall effect. Here our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V codoped TIs.

View Accepted Manuscript (DOE)

Research Organization:: Rensselaer Polytechnic Institute, Troy, NY (United States); Rutgers University, Piscataway, NJ (United States)

Sponsoring Organization:: Alfred P. Sloan Foundation; Army Research Office (ARO); National Science Foundation (NSF); USDOE; USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231; SC0002623

OSTI ID:: 1540969

Alternate ID(s):: OSTI ID: 1474775

Journal Information:: Physical Review. B, Journal Name: Physical Review. B Journal Issue: 11 Vol. 98; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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