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Integer quantum Hall effect and enhanced g factor in quantum-confined Cd3 As2 films

Journal Article · · Physical Review. B
 [1];  [2];  [2];  [3];  [2];  [3];  [4];  [2];  [4]
  1. Pennsylvania State Univ., University Park, PA (United States); OSTI
  2. Johns Hopkins Univ., Baltimore, MD (United States)
  3. Rutgers Univ., Piscataway, NJ (United States)
  4. Pennsylvania State Univ., University Park, PA (United States)
+ Show Author Affiliations
Here, we investigate the integer quantum Hall effect in Cd3 ⁢As2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor v = 1) and at spin-degenerate higher index Landau levels with even filling factors (v = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at v = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced g factor likely arises from a combination of quantum confinement and corrections from nearby subbands.
Research Organization:
Johns Hopkins Univ., Baltimore, MD (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
Grant/Contract Number:
SC0019331
OSTI ID:
2421158
Journal Information:
Physical Review. B, Journal Name: Physical Review. B Journal Issue: 20 Vol. 106; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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