Challenges to magnetic doping of thin films of the Dirac semimetal Cd 3 As 2
- Pennsylvania State Univ., University Park, PA (United States); OSTI
- Univ. of Minnesota, Minneapolis, MN (United States)
- Pennsylvania State Univ., University Park, PA (United States)
Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd3As2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd3As2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd3As2, resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared with pristine Cd3As2 films grown under similar conditions. This suggests that the surfactant effect might also serve to remove impurities from the bulk of the film. Further, we observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd3As2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.
- Research Organization:
- Johns Hopkins Univ., Baltimore, MD (United States); Energy Frontier Research Centers (EFRC) (United States). Institute for Quantum Matter (IQM)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- Grant/Contract Number:
- SC0019331
- OSTI ID:
- 1980341
- Journal Information:
- Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 2 Vol. 6; ISSN 2475-9953
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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