Proton irradiation effect on thermoelectric properties of nanostructured n-type half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01

Kempf, Nicholas; Karthik, Chinnathambi; Jaques, Brian J.; Gigax, Jonathan; Shao, Lin; Butt, Darryl P.; He, Ran; Wang, Dezhi; Ren, Zhifeng; Zhang, Yanliang

doi:10.1063/1.5025071

Proton irradiation effect on thermoelectric properties of nanostructured n-type half-Heusler Hf_0.25Zr_0.75NiSn_0.99Sb_0.01

Journal Article · Wed Jun 13 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5025071· OSTI ID:1540182

Kempf, Nicholas ^[1]; ^[2]; ^[2]; Gigax, Jonathan ^[3]; ^[3]; Butt, Darryl P. ^[4]; He, Ran ^[5]; Wang, Dezhi ^[5]; Ren, Zhifeng ^[5]; Zhang, Yanliang ^[6]

Univ. of Notre Dame, IN (United States); DOE/OSTI
Boise State Univ., ID (United States)
Texas A & M Univ., College Station, TX (United States)
Univ. of Utah, Salt Lake City, UT (United States)
Univ. of Houston, TX (United States)
Univ. of Notre Dame, IN (United States)

Here, thermoelectric properties of nanostructured half-Heusler Hf_0.25Zr_0.75NiSn_0.99Sb_0.01 were characterized before and after 2.5 MeV proton irradiation. A unique high-sensitivity scanning thermal microprobe was used to simultaneously map the irradiation effect on thermal conductivity and Seebeck coefficient with spatial resolution less than 2 μm. The thermal conductivity profile along the depth from the irradiated surface reflects excellent agreement with the irradiation-induced damage profile from simulation. The Seebeck coefficient was unaffected while both electrical and thermal conductivities decreased by 24%, resulting in no change in thermoelectric figure of merit ZT. Reductions in thermal and electrical conductivities are attributed to irradiation-induced defects that act as scattering sources for phonons and charge carriers.

View Accepted Manuscript (DOE)

Research Organization:: Boise State Univ., ID (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: NE0008255

OSTI ID:: 1540182

Alternate ID(s):: OSTI ID: 1454357

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 112; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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