Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01

Joshi, Giri; Dahal, Tulashi; Chen, Shuo; Wang, Hengzhi; Shiomi, Junichiro; Chen, Gang; Ren, Zhifeng

doi:10.1016/j.nanoen.2012.07.020

Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf_0.75–xTi_xZr_0.25NiSn_0.99Sb_0.01

Journal Article · Wed Aug 08 00:00:00 EDT 2012 · Nano Energy

DOI:https://doi.org/10.1016/j.nanoen.2012.07.020· OSTI ID:1386803

Joshi, Giri ^[1]; Dahal, Tulashi ^[1]; Chen, Shuo ^[1]; Wang, Hengzhi ^[1]; Shiomi, Junichiro ^[2]; Chen, Gang ^[3]; Ren, Zhifeng ^[1]

Boston College, Chestnut Hill, MA (United States)
Univ. of Tokyo (Japan)
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

We report the effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf_0.75–xTi_xZr_0.25NiSn_0.99Sb_0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf_0.5Zr_0.25Ti_0.25NiSn_0.99Sb_0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf_0.5Zr_0.25Ti_0.25NiSn_0.99Sb_0.01 samples are significantly higher than those of the same way prepared Hf_0.75Zr_0.25NiSn_0.99Sb_0.01 samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.

View Accepted Manuscript (DOE)

Research Organization:: Boston College, Chestnut Hill, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: EE0004840; SC0001299

OSTI ID:: 1386803

Alternate ID(s):: OSTI ID: 1105287

Journal Information:: Nano Energy, Journal Name: Nano Energy Journal Issue: 1 Vol. 2; ISSN 2211-2855

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Thermoelectric Property Study of Nanostructured p-Type Half-Heuslers (Hf, Zr, Ti)CoSb _0.8 Sn _0.2 Yan, Xiao; Liu, Weishu; Chen, Shuo Advanced Energy Materials, Vol. 3, Issue 9 https://doi.org/10.1002/aenm.201200973	journal	May 2013
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nanostructuring
77 NANOSCIENCE AND NANOTECHNOLOGY
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