Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75–xTixZr0.25NiSn0.99Sb0.01
- Boston College, Chestnut Hill, MA (United States)
- Univ. of Tokyo (Japan)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
We report the effect of titanium (Ti) substitution for hafnium (Hf) on thermoelectric properties of (Hf, Zr)-based n-type half-Heuslers: Hf0.75–xTixZr0.25NiSn0.99Sb0.01, has been studied. The samples are made by arc melting followed by ball milling and hot pressing via the nanostructuring approach. A peak thermoelectric figure-of-merit (ZT) of ~1.0 is achieved at 500 °C in samples with a composition of Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 due to a slight increase in carrier concentration and also a lower thermal conductivity caused by Ti. The ZT values below 500 °C of hot pressed Hf0.5Zr0.25Ti0.25NiSn0.99Sb0.01 samples are significantly higher than those of the same way prepared Hf0.75Zr0.25NiSn0.99Sb0.01 samples at each temperature, which are very much desired for mid-range temperature applications such as waste heat recovery in automobiles.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC); Boston College, Chestnut Hill, MA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001299; FG02-09ER46577; EE0004840
- OSTI ID:
- 1386803
- Journal Information:
- Nano Energy, Vol. 2, Issue 1; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute; ISSN 2211-2855
- Publisher:
- ElsevierCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Web of Science
Similar Records
Enhancement of thermoelectric figure-of-merit at low temperatures by titanium substitution for hafnium in n-type half-Heuslers Hf0.75-xTixZr0.25NiSn0.99Sb0.01
Effects of Rh on the thermoelectric performance of the p-type Zr{sub 0.5}Hf{sub 0.5}Co{sub 1-x}Rh{sub x}Sb{sub 0.99}Sn{sub 0.01} half-Heusler alloys
Related Subjects
solar (photovoltaic)
solar (thermal)
solid state lighting
phonons
thermal conductivity
thermoelectric
defects
mechanical behavior
charge transport
spin dynamics
materials and chemistry by design
optics
synthesis (novel materials)
synthesis (self-assembly)
synthesis (scalable processing)
Half-Heuslers
nanostructuring
process
thermoelectrics