Proton irradiation effect on thermoelectric properties of nanostructured n-type half-Heusler Hf0.25Zr0.75NiSn0.99Sb0.01

Kempf, Nicholas; Karthik, Chinnathambi; Jaques, Brian J.; Gigax, Jonathan; Shao, Lin; Butt, Darryl P.; He, Ran; Wang, Dezhi; Ren, Zhifeng; Zhang, Yanliang

doi:10.1063/1.5025071

Title: Proton irradiation effect on thermoelectric properties of nanostructured n-type half-Heusler Hf_0.25Zr_0.75NiSn_0.99Sb_0.01

Journal Article · Wed Jun 13 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5025071· OSTI ID:1540182

Kempf, Nicholas ^[1];

^[2];

^[2]; Gigax, Jonathan ^[3];

^[3]; Butt, Darryl P. ^[4]; He, Ran ^[5]; Wang, Dezhi ^[5]; Ren, Zhifeng ^[5]; Zhang, Yanliang ^[1]

Univ. of Notre Dame, IN (United States)
Boise State Univ., ID (United States)
Texas A & M Univ., College Station, TX (United States)
Univ. of Utah, Salt Lake City, UT (United States)
Univ. of Houston, TX (United States)

Here, thermoelectric properties of nanostructured half-Heusler Hf_0.25Zr_0.75NiSn_0.99Sb_0.01 were characterized before and after 2.5 MeV proton irradiation. A unique high-sensitivity scanning thermal microprobe was used to simultaneously map the irradiation effect on thermal conductivity and Seebeck coefficient with spatial resolution less than 2 μm. The thermal conductivity profile along the depth from the irradiated surface reflects excellent agreement with the irradiation-induced damage profile from simulation. The Seebeck coefficient was unaffected while both electrical and thermal conductivities decreased by 24%, resulting in no change in thermoelectric figure of merit ZT. Reductions in thermal and electrical conductivities are attributed to irradiation-induced defects that act as scattering sources for phonons and charge carriers.

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Research Organization:: Boise State Univ., ID (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE)

Grant/Contract Number:: NE0008255; NE0000124

OSTI ID:: 1540182

Alternate ID(s):: OSTI ID: 1454357

Journal Information:: Applied Physics Letters, Vol. 112, Issue 24; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 6 works

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