Alternative device structures for CIGS-based solar cells with semi-transparent absorbers

Kim, Kihwan; Shafarman, William N.

doi:10.1016/j.nanoen.2016.10.038

Title: Alternative device structures for CIGS-based solar cells with semi-transparent absorbers

Journal Article · Wed Oct 19 00:00:00 EDT 2016 · Nano Energy

DOI:https://doi.org/10.1016/j.nanoen.2016.10.038· OSTI ID:1534136

Kim, Kihwan ^[1]; Shafarman, William N. ^[2]

Korea Institute of Energy Research, Daejeon (Korea, Republic of)
University of Delaware, Newark, DE (United States)

Here in this work, we discuss two alternative structures of CIGS-based solar cells, a bi-facial configuration and a back-wall configuration. One of the critical issues in these structures is fabrication of a transparent back contact which facilitates not only ohmic contact for holes in the valance but also an effective reflector for electrons in the conduction band. In order to meet these requirements of the transparent back contact, a p-type amorphous Si (p-a-Si)/intrinsic amorphous Si (i-a-Si) bi-layer was deposited onto the ITO back contact. Absorber films were formed by a metal precursor reaction in H₂Se and H₂S, and their thicknesses were adjusted to about 0.25 µm to enhance current collection from back-side illumination. The resulting devices with a bi-facial structure of SLG/ITO/p-Si/i-Si/Cu(In, Ga)(Se,S)₂/CdS/i-ZnO/ITO/Ni-Al exhibited a comparable open-circuit voltage to a Cu(In, Ga)(Se,S)₂ cell on a Mo substrate in tests with illumination of both sides. Back-wall cells with a structure of SLG/ITO/p-Si/i-Si/Cu(In, Ga)(Se,S)₂/CdS/i-ZnO/Ag-reflector were also fabricated and improved current collection by greater light trapping was achieved compared to the bi-facial cell with back-side illumination.

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Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); Korea Institute of Energy Technology Evaluation and Planning

Grant/Contract Number:: EE0005407; 20138520011120

OSTI ID:: 1534136

Alternate ID(s):: OSTI ID: 1419587

Journal Information:: Nano Energy, Vol. 30, Issue C; ISSN 2211-2855

Publisher:: ElsevierCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 29 works

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CIGS
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bi-facial
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selenization

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