The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics
Journal Article
·
· IEEE Transactions on Nuclear Science
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
In this study, we test Si vertical junction disk modulators and waveguide-integrated Ge PIN photodiodes to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1 Mrad(Si) exposure. Whereas the bandwidth of the Si disk modulator decreases by 6.5 % after 1 Mrad(Si) dose, the bandwidth of the Ge PIN photodiode appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in p-n junction RC time constant. The Ge PIN photodiode is relatively insensitive to the surface effects because the absorption happens away from the SiO2-Ge interface and the gamma radiation has a minimal effect on carrier mobility.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- OSTI ID:
- 1507411
- Report Number(s):
- SAND--2019-3639J; 674260
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 5 Vol. 66; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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