Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

The Effect of Gamma Radiation Exposure on Active Silicon Photonic Device Performance Metrics

Journal Article · · IEEE Transactions on Nuclear Science
In this study, we test Si vertical junction disk modulators and waveguide-integrated Ge PIN photodiodes to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1 Mrad(Si) exposure. Whereas the bandwidth of the Si disk modulator decreases by 6.5 % after 1 Mrad(Si) dose, the bandwidth of the Ge PIN photodiode appears to be unaffected. The increased sensitivity of the Si disk modulator bandwidth to gamma radiation is hypothesized to be caused by a decrease in the carrier concentration of the junction with a resulting increase in p-n junction RC time constant. The Ge PIN photodiode is relatively insensitive to the surface effects because the absorption happens away from the SiO2-Ge interface and the gamma radiation has a minimal effect on carrier mobility.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1507411
Report Number(s):
SAND--2019-3639J; 674260
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 5 Vol. 66; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

Similar Records

Reliability studies on Si PIN photodiodes under Co-60 gamma radiation
Journal Article · Mon Feb 04 23:00:00 EST 2013 · AIP Conference Proceedings · OSTI ID:22113503

Permanent damage effects in Si and AlGaAs/GaAs photodiodes
Conference · Thu Dec 31 23:00:00 EST 1981 · OSTI ID:5218827

Permanent damage effects in Si and AlGaAs/GaAs photodiodes
Journal Article · Tue Nov 30 23:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States) · OSTI ID:6132220