National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Univ. of Florida, Gainesville, FL (United States). National High Magnetic Field Laboratory (NHMFL)
- Univ. of Florida, Gainesville, FL (United States)
- National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Tainan City (Taiwan)
- Princeton Univ., NJ (United States)
The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1505355
- Report Number(s):
- SAND2016-12595R; 649900
- Country of Publication:
- United States
- Language:
- English
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