skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells

Abstract

The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.

Authors:
 [1];  [1];  [2];  [3];  [4];  [4];  [4];  [4];  [5]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Univ. of Florida, Gainesville, FL (United States). National High Magnetic Field Laboratory (NHMFL)
  3. Univ. of Florida, Gainesville, FL (United States)
  4. National Taiwan Univ., Taipei (Taiwan); National Nano Device Lab., Tainan City (Taiwan)
  5. Princeton Univ., NJ (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1505355
Report Number(s):
SAND2016-12595R
649900
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Pan, Wei, Lu, Tzu-Ming, Xia, J. S., Sullivan, N. S., Huang, S. -H., Chuang, Y., Li, J. -Y., Liu, C. W., and Tsui, D. C. National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells. United States: N. p., 2016. Web. doi:10.2172/1505355.
Pan, Wei, Lu, Tzu-Ming, Xia, J. S., Sullivan, N. S., Huang, S. -H., Chuang, Y., Li, J. -Y., Liu, C. W., & Tsui, D. C. National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells. United States. https://doi.org/10.2172/1505355
Pan, Wei, Lu, Tzu-Ming, Xia, J. S., Sullivan, N. S., Huang, S. -H., Chuang, Y., Li, J. -Y., Liu, C. W., and Tsui, D. C. 2016. "National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells". United States. https://doi.org/10.2172/1505355. https://www.osti.gov/servlets/purl/1505355.
@article{osti_1505355,
title = {National High Magnetic Field Laboratory 2016 Annual Research Report: Termination of Two-Dimensional Metallic Conduction near the Metal-Insulator Transition in Si/SiGe Quantum Wells},
author = {Pan, Wei and Lu, Tzu-Ming and Xia, J. S. and Sullivan, N. S. and Huang, S. -H. and Chuang, Y. and Li, J. -Y. and Liu, C. W. and Tsui, D. C.},
abstractNote = {The physical properties of two-dimensional (2D) electrons have been a subject of interest for a long time. Yet after many years of research, the ground states of a 2D electron system (2DES) in the presence of disorder and electron-electron interaction, a realistic situation in experiments, remain an open question. Recent observations of a downturn in conductivity at low temperatures in a Si/SiGe quantum well [1], Si-MOSFETs [2,3], and 2D holes in GaAs [4-6] seem to suggest that disorder plays an important role in the so-called 2D metal-insulator transition (MIT) and at T → 0 2DES may eventually become insulating. In this experiment, we focus on the downturn behavior as a function of spin polarization, which is varied by an in-plane magnetic field.},
doi = {10.2172/1505355},
url = {https://www.osti.gov/biblio/1505355}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Dec 01 00:00:00 EST 2016},
month = {Thu Dec 01 00:00:00 EST 2016}
}