Evaluation of Interface Trap Buildup in SiC Power MOSFETs using Subthreshold Characteristics.
Conference
·
OSTI ID:1502635
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1502635
- Report Number(s):
- SAND2014-17389D; 537274
- Country of Publication:
- United States
- Language:
- English
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