Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Supplementary Material for ''Quantum dots with split enhancement gate tunnel barrier control''

Journal Article · · Applied Physics Letters
OSTI ID:1498475
 [1];  [2];  [3];  [4];  [2];  [2];  [2];  [2];  [2];  [2];  [5];  [2];  [6]
  1. Institut Quantique, Université de Sherbrooke, Sherbrooke J1K 2R1, Canada; Département de physique, Université de Sherbrooke, Sherbrooke J1K 2R1, Canada
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  3. Département de physique, Université de Sherbrooke, Sherbrooke J1K 2R1, Canada
  4. Department of Physics and Astronomy, University of New Mexico, Albuquerque, New Mexico 87131, USA
  5. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA; Center for Integrated Nanotechnology, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  6. Institut Quantique, Université de Sherbrooke, Sherbrooke J1K 2R1, Canada; Département de physique, Université de Sherbrooke, Sherbrooke J1K 2R1, Canada; Quantum Information Science Program, Canadian Institute for Advanced Research, Toronto M5G 1Z8, Canada
Abstract not provided.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1498475
Report Number(s):
SAND--2019-0278J; 671457
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 114; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

References (39)

Energy-Dependent Tunneling in a Quantum Dot journal January 2007
Gate-Defined Quantum Dots in Intrinsic Silicon journal July 2007
Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems journal July 2013
A fault-tolerant addressable spin qubit in a natural silicon quantum dot journal August 2016
Electrostatically defined silicon quantum dots with counted antimony donor implants journal February 2016
Addition spectrum of a lateral dot from Coulomb and spin-blockade spectroscopy journal June 2000
On surface roughness-limited mobility in highly doped n-MOSFET's journal July 1999
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% journal December 2017
Charge offset stability in Si single electron devices with Al gates journal September 2014
Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8 Ge 0.2 quantum well hetero-structure journal June 2018
An addressable quantum dot qubit with fault-tolerant control-fidelity journal October 2014
Fast tunnel rates in Si/SiGe one-electron single and double quantum dots journal May 2010
Fast detection of single-charge tunneling to a graphene quantum dot in a multi-level regime journal July 2012
High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism journal May 2018
Spectroscopy of Multielectrode Tunnel Barriers journal October 2018
Silicon quantum electronics journal July 2013
Two-axis control of a singlet-triplet qubit with an integrated micromagnet journal August 2014
Electron spin lifetime of a single antimony donor in silicon journal September 2013
Spin filling of valley–orbit states in a silicon quantum dot journal July 2011
Electron counting in quantum dots journal June 2009
Computer-automated tuning of semiconductor double quantum dots into the single-electron regime journal May 2016
Quantum computation with quantum dots journal January 1998
Observation of percolation-induced two-dimensional metal-insulator transition in a Si MOSFET journal June 2009
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots journal March 2011
A reconfigurable gate architecture for Si/SiGe quantum dots journal June 2015
Introduction to Mesoscopic Electron Transport book January 1997
Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures journal April 1993
Formation of strain-induced quantum dots in gated semiconductor nanostructures journal August 2015
Automated tuning of inter-dot tunnel coupling in double quantum dots journal July 2018
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots journal August 2011
Quantum computer aided design simulation and optimization of semiconductor quantum dots journal October 2013
Undoped accumulation-mode Si/SiGe quantum dots journal August 2015
Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet journal October 2016
Coherent coupling between a quantum dot and a donor in silicon journal October 2017
Micromagnets for coherent control of spin-charge qubit in lateral quantum dots journal January 2007
A silicon metal-oxide-semiconductor electron spin-orbit qubit journal May 2018
Electron Cotunneling in a Semiconductor Quantum Dot journal January 2001
Excited-state spectroscopy on a nearly closed quantum dot via charge detection journal June 2004
Fabrication of quantum dots in undoped Si/Si 0.8 Ge 0.2 heterostructures using a single metal-gate layer journal August 2016

Similar Records

Quantum dots with split enhancement gate tunnel barrier control
Journal Article · Mon Feb 25 19:00:00 EST 2019 · Applied Physics Letters · OSTI ID:1498477

A split accumulation gate architecture for silicon MOS quantum dots.
Conference · Tue Feb 28 23:00:00 EST 2017 · OSTI ID:1426389

Related Subjects