Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N

Sunay, U. R.; Zvanut, M. E.; Allerman, A. A.

doi:10.1007/s11664-014-3475-9

Reduction in the Number of Mg Acceptors with Al Concentration in Al _x Ga_1-x N

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-014-3475-9· OSTI ID:1497640

Sunay, U. R. ^[1]; Zvanut, M. E. ^[1]; Allerman, A. A. ^[2]

Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

High hole concentrations in Al _x Ga_1-x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related to compensation, extended defects, and the band gap of the alloy. Whereas electrical measurements are commonly used to measure hole density, we used electron paramagnetic resonance (EPR) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al _x Ga_1-x N with x = 0 to 0.28 was monitored for films with different dislocation densities and surface conditions. EPR measurements indicated that the amount of neutral Mg decreased by 60% in 900°C-annealed Al _x Ga_1-x N films for x = 0.18 and 0.28 as compared with x = 0.00 and 0.08. A decrease in the angular dependence of the EPR signal accompanied the increased x, suggesting a change in the local environment of the Mg. Neither dislocation density nor annealing conditions contribute to the reduced amount of neutral Mg in samples with the higher Al concentration. Rather, compensation is the simplest explanation of the observations, because a donor could both reduce the number of neutral acceptors and cause the variation in the angular dependence.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Alabama, Birmingham, AL (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF) (United States)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1497640

Report Number(s):: SAND2014--17634J; 672373

Journal Information:: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 11 Vol. 44; ISSN 0361-5235

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

References (14)

Mg in GaN: the structure of the acceptor and the electrical activity Alves, H.; Leiter, F.; Pfisterer, D. physica status solidi (c), Vol. 0, Issue 6 https://doi.org/10.1002/pssc.200303121	journal	September 2003
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN Parish, G.; Keller, S.; Denbaars, S. P. Journal of Electronic Materials, Vol. 29, Issue 1 https://doi.org/10.1007/s11664-000-0087-3	journal	January 2000
P-type conductivity in bulk AlxGa1−xN and AlxGa1−xN/AlyGa1−yN superlattices with average Al mole fraction >20% Kim, J. K.; Waldron, E. L.; Li, Y. -L. Applied Physics Letters, Vol. 84, Issue 17 https://doi.org/10.1063/1.1728322	journal	April 2004
Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers Lee, S. R.; West, A. M.; Allerman, A. A. Applied Physics Letters, Vol. 86, Issue 24 https://doi.org/10.1063/1.1947367	journal	June 2005
Comparison of electrical properties and deep traps in p-AlxGa1−xN grown by molecular beam epitaxy and metal organic chemical vapor deposition Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V. Journal of Applied Physics, Vol. 106, Issue 7 https://doi.org/10.1063/1.3238508	journal	October 2009
Role of nitrogen vacancies in the luminescence of Mg-doped GaN Yan, Qimin; Janotti, Anderson; Scheffler, Matthias Applied Physics Letters, Vol. 100, Issue 14 https://doi.org/10.1063/1.3699009	journal	April 2012
Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy Kaun, Stephen W.; Wong, Man Hoi; Mishra, Umesh K. Applied Physics Letters, Vol. 100, Issue 26 https://doi.org/10.1063/1.4730951	journal	June 2012
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition Glaser, E. R.; Carlos, W. E.; Braga, G. C. B. Physical Review B, Vol. 65, Issue 8 https://doi.org/10.1103/PhysRevB.65.085312	journal	February 2002
Theoretical investigation of native defects, impurities, and complexes in aluminum nitride Stampfl, C.; Van de Walle, C. G. Physical Review B, Vol. 65, Issue 15 https://doi.org/10.1103/PhysRevB.65.155212	journal	April 2002
Nature of acceptor states in magnesium-doped gallium nitride Aliev, G. N.; Zeng, S.; Davies, J. J. Physical Review B, Vol. 71, Issue 19 https://doi.org/10.1103/PhysRevB.71.195204	journal	May 2005
Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors Lyons, John L.; Janotti, Anderson; Van de Walle, Chris G. Physical Review Letters, Vol. 108, Issue 15 https://doi.org/10.1103/PhysRevLett.108.156403	journal	April 2012
Metastability of Oxygen Donors in AlGaN McCluskey, M. D.; Johnson, N. M.; Van de Walle, C. G. Physical Review Letters, Vol. 80, Issue 18 https://doi.org/10.1103/PhysRevLett.80.4008	journal	May 1998
Hole Compensation Mechanism of P-Type GaN Films Nakamura, Shuji; Iwasa, Naruhito; Senoh, Masayuki Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 5A https://doi.org/10.1143/JJAP.31.1258	journal	May 1992
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi Journal of The Electrochemical Society, Vol. 157, Issue 7 https://doi.org/10.1149/1.3392365	journal	January 2010

Similar Records

The source of holes in p-type In _x Ga _1-x N films

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Journal of Applied Physics · OSTI ID:1382741

Effect of the doping and the Al content on the microstructure and morphology of thin Al{sub x}Ga{sub 1{minus}x}N layers grown by MOCVD[Metal Organic Chemical Vapor Deposition]

Conference · Sat Jul 01 00:00:00 EDT 2000 · OSTI ID:20104560

Efficient acceptor activation in Al{sub x}Ga{sub 1{minus}x}N/GaN doped superlattices

Conference · Sat Jul 01 00:00:00 EDT 2000 · OSTI ID:20104565

Related Subjects

36 MATERIALS SCIENCE
GaN
Mg
magnetic resonance
nitride
p-type

Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N

Citation Formats

References (14)

Similar Records

Related Subjects

Reduction in the Number of Mg Acceptors with Al Concentration in Al _x Ga_1-x N