Reduction in the Number of Mg Acceptors with Al Concentration in Al x Ga1-x N

Sunay, U. R.; Zvanut, M. E.; Allerman, A. A.

doi:10.1007/s11664-014-3475-9

Reduction in the Number of Mg Acceptors with Al Concentration in Al _x Ga_1-x N

Journal Article · Sat Nov 01 00:00:00 EDT 2014 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-014-3475-9· OSTI ID:1497640

Sunay, U. R. ^[1]; Zvanut, M. E. ^[1]; Allerman, A. A. ^[2]

Univ. of Alabama, Birmingham, AL (United States). Dept. of Physics
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

High hole concentrations in Al _x Ga_1-x N become increasingly difficult to obtain as the Al mole fraction increases. The problem is believed to be related to compensation, extended defects, and the band gap of the alloy. Whereas electrical measurements are commonly used to measure hole density, we used electron paramagnetic resonance (EPR) spectroscopy to investigate a defect related to the neutral Mg acceptor. The amount and symmetry of neutral Mg in MOCVD-grown Al _x Ga_1-x N with x = 0 to 0.28 was monitored for films with different dislocation densities and surface conditions. EPR measurements indicated that the amount of neutral Mg decreased by 60% in 900°C-annealed Al _x Ga_1-x N films for x = 0.18 and 0.28 as compared with x = 0.00 and 0.08. A decrease in the angular dependence of the EPR signal accompanied the increased x, suggesting a change in the local environment of the Mg. Neither dislocation density nor annealing conditions contribute to the reduced amount of neutral Mg in samples with the higher Al concentration. Rather, compensation is the simplest explanation of the observations, because a donor could both reduce the number of neutral acceptors and cause the variation in the angular dependence.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Alabama, Birmingham, AL (United States)

Sponsoring Organization:: National Science Foundation (NSF) (United States); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1497640

Report Number(s):: SAND2014--17634J; 672373

Journal Information:: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 11 Vol. 44; ISSN 0361-5235

Publisher:: SpringerCopyright Statement

Country of Publication:: United States

Language:: English

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