Efficient acceptor activation in Al{sub x}Ga{sub 1{minus}x}N/GaN doped superlattices

Conference · Sat Jul 01 04:00:00 EDT 2000

OSTI ID:20104565

Goepfert, I D; Schubert, E F; Osinsky, A; Norris, P E

Mg-doped superlattices consisting of uniformly doped Al{sub x}Ga{sub 1{minus}x}N and GaN layers are analyzed by Hall-effect measurements. Acceptor activation energies of 70 meV and 58 meV are obtained for superlattice structures with an Al mole fraction of x = 0.10 and 0.20 in the barrier layers, respectively. These energies are significantly lower than the activation energy measured for Mg-doped GaN thin films. At room temperature, the doped superlattices have free hole concentrations of 2 x 10{sup 18} cm{sup {minus}3} and 4 x 10{sup 18} cm{sup {minus}3} for x = 0.10 and 0.20, respectively. The increase in hole concentration with Al content of the superlattice is consistent with theory. The room temperature conductivity measured for the superlattice structures are 0.27 S/cm and 0.64 S/cm for an Al mole fraction of x = 0.10 and 0.20, respectively.

• Research Organization: Boston Univ., MA (US)
• OSTI ID: 20104565
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
DOPED MATERIALS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM NITRIDES
HALL EFFECT
HOLE MOBILITY
MAGNESIUM
TEMPERATURE DEPENDENCE
THIN FILMS