The source of holes in p-type In x Ga 1-x N films

Zvanut, M. E.; Willoughby, W. R.; Koleske, D. D.

doi:10.1063/1.4759242

The source of holes in p-type In _x Ga _1-x N films

Journal Article · Mon Oct 15 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4759242· OSTI ID:1382741

Zvanut, M. E.; Willoughby, W. R.; Koleske, D. D.

The origin of holes in Mg-doped In_xGa_1-xN films is investigated using electron paramagnetic resonance (EPR) spectroscopy. Unlike in Mg-doped GaN, the number of Mg-related acceptors in films with x between 0.021 and 0.112 decreases as the hole density increases. The EPR results indicate that the previously suggested models involving isolated acceptors or band formation cannot adequately explain hole production in InGaN. Rather, additional features such as In-induced passivating centers must be introduced.

Research Organization:: Energy Frontier Research Centers (EFRC) (United States). EFRC for Solid State Lighting Science (SSLS)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 1382741

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 112; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

References (8)

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Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers Lee, Wonseok; Limb, Jae; Ryou, Jae-Hyun Journal of Display Technology, Vol. 3, Issue 2 https://doi.org/10.1109/JDT.2007.896719	journal	June 2007
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The source of holes in p-type In x Ga 1-x N films

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The source of holes in p-type In _x Ga _1-x N films