Integrated high electron mobility transistors in GaAs/AlGaAs heterostructures for amplification at sub-Kelvin temperatures

Tracy, Lisa A.; Reno, John L.; Fallahi, Saeed; Manfra, Michael J.

doi:10.1063/1.5083818

Integrated high electron mobility transistors in GaAs/AlGaAs heterostructures for amplification at sub-Kelvin temperatures

Journal Article · Mon Feb 04 23:00:00 EST 2019 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5083818· OSTI ID:1496636

Tracy, Lisa A. ^[1]; Reno, John L. ^[1]; Fallahi, Saeed ^[2]; Manfra, Michael J. ^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Purdue Univ., West Lafayette, IN (United States)

Here, we demonstrate the use of custom high electron mobility transistors (HEMTs) fabricated in GaAs/AlGaAs heterostructures to amplify current from quantum dot devices. The amplifier circuit is located adjacent to the quantum dot device, at sub-Kelvin temperatures, in order to reduce the impact of cable capacitance and environmental noise. Using this circuit, we show a current gain of 380 for 0.56 μW of power dissipation, with a bandwidth of 2.7 MHz and current noise referred to the input of 24 fA/Hz^1/2 for frequencies of 0.1–1 MHz. The power consumption required for similar gain is reduced by more than a factor of 20 compared to a previous demonstration using a commercial off-the-shelf HEMT. Lastly, we also demonstrate integration of a HEMT amplifier circuit on-chip with a quantum dot device, which has the potential to reduce parasitics and should allow for more complex circuits with reduced footprints.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1496636

Report Number(s):: SAND--2019-0770J; 671806

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 114; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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