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Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

Journal Article · · Scientific Reports
 [1];  [2];  [2];  [2];  [2];  [3];  [3];  [2];  [2];  [2];  [2];  [2];  [2];  [4];  [2]
  1. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. de Sherbrooke, QC (Canada)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Center for Integrated Nanotechnologies, Albuquerque, NM (United States)
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/√Hz range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/√Hz and 400 μe/√Hz, respectively. For the single-shot readout performed, less than 10 its is required for both circuits to achieve bit error rates below 10-3, which is a putative threshold for quantum error correction.
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000
OSTI ID:
1574799
Report Number(s):
SAND--2019-7405J; 676926
Journal Information:
Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 9; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

References (64)

A high speed radio-frequency quantum point contact charge detector for time resolved readout applications of spin qubits journal February 2010
A silicon-based nuclear spin quantum computer journal May 1998
Storing quantum information for 30 seconds in a nanoelectronic device journal October 2014
A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% journal December 2017
Cryogenic amplifier for fast real-time detection of single-electron tunneling journal September 2007
Fast single-charge sensing with a rf quantum point contact journal October 2007
Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor journal October 2012
Radio-frequency dispersive detection of donor atoms in a field-effect transistor journal March 2014
Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures journal February 2016
Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence journal July 2016
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D − Charge State journal October 2015
Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array journal July 2017
Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime journal June 1995
Isotopically enhanced triple-quantum-dot qubit journal May 2015
Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots journal September 2005
The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer journal May 1998
Single-shot readout of an electron spin in silicon text January 2010
High-fidelity readout and control of a nuclear spin qubit in silicon text January 2013
Suppressing qubit dephasing using real-time Hamiltonian estimation text January 2014
Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor text January 2015
A fault-tolerant addressable spin qubit in a natural silicon quantum dot text January 2016
Quantum dots with split enhancement gate tunnel barrier control text January 2017
Single-shot read-out of an individual electron spin in a quantum dot journal July 2004
Single-shot readout of an electron spin in silicon journal September 2010
High-fidelity readout and control of a nuclear spin qubit in silicon journal April 2013
Suppressing qubit dephasing using real-time Hamiltonian estimation journal October 2014
Coherent coupling between a quantum dot and a donor in silicon journal October 2017
A silicon metal-oxide-semiconductor electron spin-orbit qubit journal May 2018
High-fidelity entangling gate for double-quantum-dot spin qubits journal January 2017
Broadband single‐electron tunneling transistor journal April 1996
Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor journal February 2015
Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor journal May 2015
Quantum dots with split enhancement gate tunnel barrier control journal February 2019
Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet journal October 2016
Fast Charge Sensing of a Cavity-Coupled Double Quantum Dot Using a Josephson Parametric Amplifier journal July 2015
Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures journal August 2017
Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation journal May 1996
Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot journal April 2010
Rapid Single-Shot Measurement of a Singlet-Triplet Qubit journal October 2009
Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate Sensors journal January 2013
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D − Charge State journal October 2015
Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array journal July 2017
Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and Backaction journal April 2001
Using a Quantum Dot as a High-Frequency Shot Noise Detector journal May 2006
Double-Dot Quantum Ratchet Driven by an Independently Biased Quantum Point Contact journal October 2006
Frequency-Selective Single-Photon Detection Using a Double Quantum Dot journal November 2007
Sub-1-K Operation of SiGe Transistors and Circuits journal May 2009
Operation of SiGe HBTs Down to 70 mK journal January 2017
A fault-tolerant addressable spin qubit in a natural silicon quantum dot journal August 2016
Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits journal April 2012
Resonantly driven CNOT gate for electron spins journal December 2017
Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and Backaction text January 2001
Frequency-selective single photon detection using a double quantum dot text January 2007
Fast Single-Charge Sensing with an rf Quantum Point Contact text January 2007
Rapid Single-Shot Measurement of a Singlet-Triplet Qubit text January 2009
Radio-frequency dispersive detection of donor atoms in a field-effect transistor text January 2013
Storing quantum information for 30 seconds in a nanoelectronic device text January 2014
Fast charge sensing of a cavity-coupled double quantum dot using a Josephson parametric amplifier text January 2015
Coherent coupling between a quantum dot and a donor in silicon text January 2015
Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence text January 2016
High-fidelity entangling gate for double-quantum-dot spin qubits preprint January 2016
Robust Single-Shot Spin Measurement with 99.5% Fidelity in a Quantum Dot Array text January 2017
Double-Dot Quantum Ratchet Driven by an Independently Biased Quantum Point Contact text January 2006
Cryogenic amplifier for fast real-time detection of single-electron tunneling text January 2007

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