Integrated high electron mobility transistors in GaAs/AlGaAs heterostructures for amplification at sub-Kelvin temperatures
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Purdue Univ., West Lafayette, IN (United States)
Here, we demonstrate the use of custom high electron mobility transistors (HEMTs) fabricated in GaAs/AlGaAs heterostructures to amplify current from quantum dot devices. The amplifier circuit is located adjacent to the quantum dot device, at sub-Kelvin temperatures, in order to reduce the impact of cable capacitance and environmental noise. Using this circuit, we show a current gain of 380 for 0.56 μW of power dissipation, with a bandwidth of 2.7 MHz and current noise referred to the input of 24 fA/Hz1/2 for frequencies of 0.1–1 MHz. The power consumption required for similar gain is reduced by more than a factor of 20 compared to a previous demonstration using a commercial off-the-shelf HEMT. Lastly, we also demonstrate integration of a HEMT amplifier circuit on-chip with a quantum dot device, which has the potential to reduce parasitics and should allow for more complex circuits with reduced footprints.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1496636
- Report Number(s):
- SAND-2019-0770J; 671806
- Journal Information:
- Applied Physics Letters, Vol. 114, Issue 5; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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