Origin of deep localization in GaAs1-xBix and its consequences for alloy properties

Alberi, K.; Fluegel, B.; Beaton, D. A.; Steger, M.; Crooker, S. A.; Mascarenhas, A.

doi:10.1103/PhysRevMaterials.2.114603

Origin of deep localization in $GaA s_{1 - x} B i_{x}$ and its consequences for alloy properties

Journal Article · Wed Nov 28 00:00:00 EST 2018 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.2.114603· OSTI ID:1492517

Alberi, K. ^[1]; Fluegel, B. ^[1]; Beaton, D. A. ^[1]; Steger, M. ^[1]; Crooker, S. A. ^[2]; Mascarenhas, A. ^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Here, the addition of Bi isoelectronic dopants to GaAs provides an attractive avenue for tailoring its electronic band structure, yet it also introduces less appealing and very strong hole localization. The origin of the localization is still not thoroughly understood, which has in part inhibited the practical use of GaAs_1-xBi_x alloys. In this study, the evolution of hole localization was evaluated as a function of composition. We find that spatial overlap of Bi-related bound states at concentrations >0.6% Bi effectively enables holes to be channeled to those at the lowest energies, thereby aiding localization of excitons ≥150meV below the band gap. The large energy gap between these bound states and the GaAs valence-band edge combined with the slow upward movement of the valence band with composition causes deep localization to persist to high concentrations >6% Bi. The results provide important insight into the optical and transport behavior of GaAs_1-xBi_x and its implications for device applications.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: 89233218CNA000001; AC36-08GO28308

OSTI ID:: 1492517

Alternate ID(s):: OSTI ID: 1507332
OSTI ID: 1483728

Report Number(s):: LA-UR--18-27843; NREL/JA-5K00-72762

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 11 Vol. 2; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

References (41)

The ground state of the exciton in a magnetic field Cabib, D.; Fabri, E.; Fiorio, G. Solid State Communications, Vol. 9, Issue 17 https://doi.org/10.1016/0038-1098(71)90169-4	journal	September 1971
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth Bastiman, F.; Mohmad, A. R. B.; Ng, J. S. Journal of Crystal Growth, Vol. 338, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.07.036	journal	January 2012
Kinetically limited growth of GaAsBi by molecular-beam epitaxy Ptak, A. J.; France, R.; Beaton, D. A. Journal of Crystal Growth, Vol. 338, Issue 1 https://doi.org/10.1016/j.jcrysgro.2011.10.040	journal	January 2012
Time-resolved photoluminescence studies of InxGa1−xAs1−yNy Mair, R. A.; Lin, J. Y.; Jiang, H. X. Applied Physics Letters, Vol. 76, Issue 2 https://doi.org/10.1063/1.125698	journal	January 2000
Band gap of GaAs1−xBix, 0 Francoeur, S.; Seong, M. -J.; Mascarenhas, A. Applied Physics Letters, Vol. 82, Issue 22 https://doi.org/10.1063/1.1581983	journal	June 2003
Early manifestation of localization effects in diluted Ga(AsN) Masia, F.; Polimeni, A.; Baldassarri Höger von Högersthal, G. Applied Physics Letters, Vol. 82, Issue 25 https://doi.org/10.1063/1.1586787	journal	June 2003
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1−xBix Lu, X.; Beaton, D. A.; Lewis, R. B. Applied Physics Letters, Vol. 92, Issue 19 https://doi.org/10.1063/1.2918844	journal	May 2008
Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix Pettinari, G.; Polimeni, A.; Capizzi, M. Applied Physics Letters, Vol. 92, Issue 26 https://doi.org/10.1063/1.2953176	journal	June 2008
Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence Kudrawiec, R.; Syperek, M.; Poloczek, P. Journal of Applied Physics, Vol. 106, Issue 2 https://doi.org/10.1063/1.3168429	journal	July 2009
Distribution of bismuth atoms in epitaxial GaAsBi Sales, D. L.; Guerrero, E.; Rodrigo, J. F. Applied Physics Letters, Vol. 98, Issue 10 https://doi.org/10.1063/1.3562376	journal	March 2011
Luminescence dynamics in Ga(AsBi) Imhof, Sebastian; Wagner, Christian; Thränhardt, Angela Applied Physics Letters, Vol. 98, Issue 16 https://doi.org/10.1063/1.3580773	journal	April 2011
Extremely uniform bound exciton states in nitrogen δ -doped GaAs studied by photoluminescence spectroscopy in external magnetic fields Harada, Yukihiro; Kubo, Terutada; Inoue, Tomoya Journal of Applied Physics, Vol. 110, Issue 8 https://doi.org/10.1063/1.3654015	journal	October 2011
Experimental and theoretical studies of band gap alignment in GaAs _1−x Bi _x /GaAs quantum wells Kudrawiec, R.; Kopaczek, J.; Polak, M. P. Journal of Applied Physics, Vol. 116, Issue 23 https://doi.org/10.1063/1.4904740	journal	December 2014
Insight into the epitaxial growth of high optical quality GaAs _1–x Bi _x Beaton, D. A.; Mascarenhas, A.; Alberi, K. Journal of Applied Physics, Vol. 118, Issue 23 https://doi.org/10.1063/1.4937574	journal	December 2015
Excitonic mobility edge and ultra-short photoluminescence decay time in n-type GaAsN Eßer, F.; Winnerl, S.; Patanè, A. Applied Physics Letters, Vol. 109, Issue 18 https://doi.org/10.1063/1.4966949	journal	October 2016
Energy scale of compositional disorder in Ga(AsBi) Shakfa, M. K.; Jandieri, K.; Wiemer, M. Journal of Physics D: Applied Physics, Vol. 48, Issue 42 https://doi.org/10.1088/0022-3727/48/42/425101	journal	September 2015
Optical and spin properties of localized and free excitons in GaBi _x As _{1− x} /GaAs multiple quantum wells Balanta, M. A. G.; Kopaczek, J.; Orsi Gordo, V. Journal of Physics D: Applied Physics, Vol. 49, Issue 35 https://doi.org/10.1088/0022-3727/49/35/355104	journal	August 2016
Band engineering in dilute nitride and bismide semiconductor lasers Broderick, C. A.; Usman, M.; Sweeney, S. J. Semiconductor Science and Technology, Vol. 27, Issue 9 https://doi.org/10.1088/0268-1242/27/9/094011	journal	August 2012
Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence Mazzucato, S.; Boonpeng, P.; Carrère, H. Semiconductor Science and Technology, Vol. 28, Issue 2 https://doi.org/10.1088/0268-1242/28/2/022001	journal	January 2013
Localization of Electronic States in III-V Semiconductor Alloys: A Comparative Study Pashartis, C.; Rubel, O. Physical Review Applied, Vol. 7, Issue 6 https://doi.org/10.1103/PhysRevApplied.7.064011	journal	June 2017
Thermally activated exciton transfer in GaAs 1 − x P x :N Kash, J. A.; Mariette, H.; Wolford, D. J. Physical Review B, Vol. 32, Issue 6 https://doi.org/10.1103/PhysRevB.32.3753	journal	September 1985
Resonant Raman scattering on localized states due to disorder in GaAs 1 − x P x alloys Oueslati, M.; Benoit, C.; Zouaghi, M. Physical Review B, Vol. 37, Issue 6 https://doi.org/10.1103/PhysRevB.37.3037	journal	February 1988
Isoelectronic impurity states in GaAs:N Zhang, Yong; Mascarenhas, A. Physical Review B, Vol. 61, Issue 23 https://doi.org/10.1103/PhysRevB.61.15562	journal	June 2000
Discrete and continuous spectrum of nitrogen-induced bound states in heavily doped GaAs 1 − x N x Zhang, Yong; Mascarenhas, A.; Geisz, J. F. Physical Review B, Vol. 63, Issue 8 https://doi.org/10.1103/PhysRevB.63.085205	journal	February 2001
Similar and dissimilar aspects of III − V semiconductors containing Bi versus N Zhang, Yong; Mascarenhas, A.; Wang, L. -W. Physical Review B, Vol. 71, Issue 15 https://doi.org/10.1103/PhysRevB.71.155201	journal	April 2005
Diamagnetic shift of disorder-localized excitons in narrow GaAs ∕ AlGaAs quantum wells Erdmann, M.; Ropers, C.; Wenderoth, M. Physical Review B, Vol. 74, Issue 12 https://doi.org/10.1103/PhysRevB.74.125412	journal	September 2006
Bi isoelectronic impurities in GaAs Francoeur, S.; Tixier, S.; Young, E. Physical Review B, Vol. 77, Issue 8 https://doi.org/10.1103/PhysRevB.77.085209	journal	February 2008
Spatial correlation between Bi atoms in dilute GaAs 1 − x Bi x : From random distribution to Bi pairing and clustering Ciatto, G.; Young, E. C.; Glas, F. Physical Review B, Vol. 78, Issue 3 https://doi.org/10.1103/PhysRevB.78.035325	journal	July 2008
Compositional dependence of the exciton reduced mass in GaAs 1 − x Bi x ( x = 0 – 10 % ) Pettinari, G.; Polimeni, A.; Blokland, J. H. Physical Review B, Vol. 81, Issue 23 https://doi.org/10.1103/PhysRevB.81.235211	journal	June 2010
Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs Usman, Muhammad; Broderick, Christopher A.; Lindsay, Andrew Physical Review B, Vol. 84, Issue 24 https://doi.org/10.1103/PhysRevB.84.245202	journal	December 2011
Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs 1 − x N x alloys: The appearance of a mobility edge Alberi, K.; Fluegel, B.; Beaton, D. A. Physical Review B, Vol. 86, Issue 4 https://doi.org/10.1103/PhysRevB.86.041201	journal	July 2012
Evolution of superclusters and delocalized states in GaAs 1 − x N x Fluegel, B.; Alberi, K.; Beaton, D. A. Physical Review B, Vol. 86, Issue 20 https://doi.org/10.1103/PhysRevB.86.205203	journal	November 2012
Impact of alloy disorder on the band structure of compressively strained GaBi x As 1 − x Usman, Muhammad; Broderick, Christopher A.; Batool, Zahida Physical Review B, Vol. 87, Issue 11 https://doi.org/10.1103/PhysRevB.87.115104	journal	March 2013
Direct observation of the E − resonant state in GaA s 1 − x B i x Alberi, K.; Beaton, D. A.; Mascarenhas, A. Physical Review B, Vol. 92, Issue 24 https://doi.org/10.1103/PhysRevB.92.241201	journal	December 2015
Band Anticrossing in GaInNAs Alloys Shan, W.; Walukiewicz, W.; Ager, J. W. Physical Review Letters, Vol. 82, Issue 6 https://doi.org/10.1103/PhysRevLett.82.1221	journal	February 1999
Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs 1 − x N x with x < 0.03 Perkins, J. D.; Mascarenhas, A.; Zhang, Yong Physical Review Letters, Vol. 82, Issue 16 https://doi.org/10.1103/PhysRevLett.82.3312	journal	April 1999
Evolution of III-V Nitride Alloy Electronic Structure: The Localized to Delocalized Transition Kent, P. R. C.; Zunger, Alex Physical Review Letters, Vol. 86, Issue 12 https://doi.org/10.1103/PhysRevLett.86.2613	journal	March 2001
Giant Spin-Orbit Bowing in GaAs 1 − x Bi x Fluegel, B.; Francoeur, S.; Mascarenhas, A. Physical Review Letters, Vol. 97, Issue 6 https://doi.org/10.1103/PhysRevLett.97.067205	journal	August 2006
Localization behavior at bound Bi complex states in GaA s 1 − x B i x Alberi, K.; Christian, T. M.; Fluegel, B. Physical Review Materials, Vol. 1, Issue 2 https://doi.org/10.1103/PhysRevMaterials.1.024605	journal	July 2017
Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers Weyers, Markus; Sato, Michio; Ando, Hiroaki Japanese Journal of Applied Physics, Vol. 31, Issue Part 2, No. 7A https://doi.org/10.1143/JJAP.31.L853	journal	July 1992
Spectrally resolved localized states in GaAs ₁₋ _x Bi _x Christian, Theresa M.; Alberi, Kirstin; Beaton, Daniel A. Japanese Journal of Applied Physics, Vol. 56, Issue 3 https://doi.org/10.7567/JJAP.56.035801	journal	February 2017

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