Hole-induced electronic and optical transitions in La1-xSrxFeO3 epitaxial thin films

Wang, Le; Du, Yingge; Sushko, Peter V.; Bowden, Mark E.; Stoerzinger, Kelsey A.; Heald, Steven M.; Scafetta, Mark D.; Kaspar, Tiffany C.; Chambers, Scott A.

doi:10.1103/PhysRevMaterials.3.025401

Hole-induced electronic and optical transitions in $L a_{1 - x} S r_{x} Fe O_{3}$ epitaxial thin films

Journal Article · Fri Feb 01 04:00:00 EST 2019 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.3.025401· OSTI ID:1501850

Wang, Le; Du, Yingge; Sushko, Peter V.; Bowden, Mark E.; Stoerzinger, Kelsey A.; Heald, Steven M.; Scafetta, Mark D.; Kaspar, Tiffany C.; Chambers, Scott A.

We have investigated the electronic and optical properties of epitaxial La_1-xSr_xFeO₃ for 0 = x = 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoemission features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward to the valence band maximum. Both Fe 2p and O 1s spectra broaden to higher binding energy with increasing x, consistent with delocalization of Sr-induced holes in the Fe 3d – O 2p hybridized valence band. Combining X-ray valence band photoemission and O K-edge x-ray absorption data, we map the evolution of the occupied and unoccupied bands and observe a narrowing of the gap, along with a transfer of state density from just below to just above the Fermi level, resulting from hole doping. In-plane transport measurements confirm that the material becomes a p-type semiconductor at lower doping levels and exhibits a insulator-to-metal transition at x = 1. Sub-gap optical transitions revealed by spectroscopic ellipsometry are explained based on insight from theoretical densities of states and first-principles calculations of optical absorption spectra.

Research Organization:: Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC05-76RL01830

OSTI ID:: 1501850

Report Number(s):: PNNL-SA-139953

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 2 Vol. 3; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

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