Localization behavior at bound Bi complex states in GaAs1-xBix

Alberi, K.; Christian, T. M.; Fluegel, B.; Crooker, S. A.; Beaton, D. A.; Mascarenhas, A.

doi:10.1103/PhysRevMaterials.1.024605

Localization behavior at bound Bi complex states in $GaA s_{1 - x} B i_{x}$

Journal Article · Sat Jul 01 00:00:00 EDT 2017 · Physical Review Materials

DOI:https://doi.org/10.1103/PhysRevMaterials.1.024605· OSTI ID:1415125

Alberi, K.; Christian, T. M.; Fluegel, B.; Crooker, S. A.; Beaton, D. A.; Mascarenhas, A.

While bismuth-related states are known to localize carriers in GaAs_1-xBi_x alloys, the localization behavior of distinct Bi pair, triplet and cluster states bound above the valence band is less well understood. We probe localization at three different Bi complex states in dilute GaAs_1-xBi_x alloys using magneto-photoluminescence and time-resolved photoluminescence spectroscopy. The mass of electrons Coulomb-bound to holes trapped at Bi pair states is found to increase relative to the average electron mass in the alloy. This increase is attributed to enhanced local compressive strain in the immediate vicinity of the pairs. The dependence of energy transfer between these states on composition is also explored.

View Accepted Manuscript (DOE)

Research Organization:: Los Alamos National Laboratory (LANL); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC36-08GO28308; AC52-06NA25396

OSTI ID:: 1415125

Alternate ID(s):: OSTI ID: 1415386
OSTI ID: 1372728

Report Number(s):: LA-UR-17-24317; NREL/JA-5K00-68789

Journal Information:: Physical Review Materials, Journal Name: Physical Review Materials Journal Issue: 2 Vol. 1; ISSN PRMHAR; ISSN 2475-9953

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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