Radiation defect dynamics in GaAs studied by pulsed ion beams

Bayu Aji, L. B.; Wallace, J. B.; Kucheyev, S. O.

doi:10.1063/1.5038018

Radiation defect dynamics in GaAs studied by pulsed ion beams

Journal Article · Sat Jul 14 00:00:00 UTC 2018 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5038018· OSTI ID:1488820

^[1]; Wallace, J. B. ^[2]; Kucheyev, S. O. ^[1]

Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Texas A & M Univ., College Station, TX (United States). Dept. of Nuclear Engineering

Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a pulsed beam method to study radiation defect dynamics in GaAs in the temperature range of 20–100 °C irradiated with 500 keV Xe ions. Results show that, with increasing temperature, the defect relaxation time constant monotonically decreases from ~5.2 to ~0.4 ms. A change in the dominant dynamic annealing process occurs at a critical temperature of ~60 °C, as evidenced by a change in the activation energy. A comparison with the other semiconductors studied by the pulsed beam method (Si, Ge, and 4H-SiC) reveals that both the high-temperature activation energy and the temperature below which dynamic annealing becomes negligible scale with the melting point.

View Accepted Manuscript (DOE)

Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE; USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-07NA27344

OSTI ID:: 1488820

Alternate ID(s):: OSTI ID: 1459479

Report Number(s):: LLNL-JRNL--749651; 934897

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 124; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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