Thickness scaling of pyroelectric response in thin ferroelectric Hf 1-xZr xO2 films

Smith, Sean W.; Henry, M. David; Brumbach, Michael T.; Rodriguez, Mark A.; Ihlefeld, Jon F.

doi:10.1063/1.5045635

Title: Thickness scaling of pyroelectric response in thin ferroelectric Hf _1-_xZr _xO₂ films

Journal Article · Thu Nov 01 00:00:00 EDT 2018 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.5045635· OSTI ID:1483977

Smith, Sean W. ^[1]; Henry, M. David ^[1]; Brumbach, Michael T. ^[1]; Rodriguez, Mark A. ^[1];

^[2]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States). Department of Materials Science and Engineering and Charles L. Brown Department of Electrical and Computer Engineering

In this study, the scaling of polarization and pyroelectric response across a thickness series (5–20 nm) of Hf_0.58Zr_0.42O₂ films with TaN electrodes was characterized. Reduction in thickness from 20 nm to 5 nm resulted in a decreased remanent polarization from 17 to 2.8 μC cm^-2. Accompanying the decreased remanent polarization was an increased absolute pyroelectric coefficient, from 30 to 58 μC m^-2 K^-1. The pyroelectric response of the 5 nm film was unstable and decreased logarithmically with time, while that of 10 nm and thicker films was stable over a time scale of >300 h at room temperature. Finally, the sign of the pyroelectric response was irreversible with differing polarity of poling bias for the 5 nm thick film, indicating that the enhanced pyroelectric response was of electret origins, whereas the pyroelectric response in thicker films was consistent with a crystallographic origin.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000; NA0003525

OSTI ID:: 1483977

Report Number(s):: SAND-2018-12973J; 669783

Journal Information:: Applied Physics Letters, Vol. 113, Issue 18; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 14 works

Citation information provided by
Web of Science

References (33)

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study Batra, Rohit; Huan, Tran Doan; Jones, Jacob L. The Journal of Physical Chemistry C, Vol. 121, Issue 8 https://doi.org/10.1021/acs.jpcc.6b11972	journal	February 2017
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf _0.5 Zr _0.5 O ₂ films Kim, Si Joon; Mohan, Jaidah; Lee, Jaebeom Applied Physics Letters, Vol. 112, Issue 17 https://doi.org/10.1063/1.5026715	journal	April 2018
Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO ₂ ) thin films Mart, C.; Czernohorsky, M.; Zybell, S. Applied Physics Letters, Vol. 113, Issue 12 https://doi.org/10.1063/1.5046844	journal	September 2018
Use of low‐frequency sinusoidal temperature waves to separate pyroelectric currents from nonpyroelectric currents. Part II. Experiment Sharp, Edward J.; Garn, Lynn E. Journal of Applied Physics, Vol. 53, Issue 12 https://doi.org/10.1063/1.330455	journal	December 1982
An extensive study of the influence of dopants on the ferroelectric properties of HfO ₂ Starschich, S.; Boettger, U. Journal of Materials Chemistry C, Vol. 5, Issue 2 https://doi.org/10.1039/C6TC04807B	journal	January 2017
Study on the degradation mechanism of the ferroelectric properties of thin Hf _0.5 Zr _0.5 O ₂ films on TiN and Ir electrodes Park, Min Hyuk; Kim, Han Joon; Kim, Yu Jin Applied Physics Letters, Vol. 105, Issue 7 https://doi.org/10.1063/1.4893376	journal	August 2014
Layer thickness scaling and wake-up effect of pyroelectric response in Si-doped HfO ₂ Mart, C.; Kämpfe, T.; Zybell, S. Applied Physics Letters, Vol. 112, Issue 5 https://doi.org/10.1063/1.5019308	journal	January 2018
Temperature and thickness dependent permittivity of (Ba,Sr)TiO3 thin films Parker, C. B.; Maria, J. -P.; Kingon, A. I. Applied Physics Letters, Vol. 81, Issue 2 https://doi.org/10.1063/1.1490148	journal	July 2002
On the structural origins of ferroelectricity in HfO ₂ thin films Sang, Xiahan; Grimley, Everett D.; Schenk, Tony Applied Physics Letters, Vol. 106, Issue 16 https://doi.org/10.1063/1.4919135	journal	April 2015
Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO ₂ Starschich, S.; Menzel, S.; Böttger, U. Journal of Applied Physics, Vol. 121, Issue 15 https://doi.org/10.1063/1.4981893	journal	April 2017
Ferroelectric phase transitions in nanoscale HfO 2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors Hoffmann, Michael; Schroeder, Uwe; Künneth, Christopher Nano Energy, Vol. 18 https://doi.org/10.1016/j.nanoen.2015.10.005	journal	November 2015
Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO ₂ Pešić, Milan; Hoffmann, Michael; Richter, Claudia Advanced Functional Materials, Vol. 26, Issue 41 https://doi.org/10.1002/adfm.201603182	journal	September 2016
Modeling ferroelectric film properties and size effects from tetragonal interlayer in Hf _1– _x Zr _x O ₂ grains Künneth, Christopher; Materlik, Robin; Kersch, Alfred Journal of Applied Physics, Vol. 121, Issue 20 https://doi.org/10.1063/1.4983811	journal	May 2017
Pyroelectric response in crystalline hafnium zirconium oxide (Hf _1- _x Zr _x O ₂ ) thin films Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A. Applied Physics Letters, Vol. 110, Issue 7 https://doi.org/10.1063/1.4976519	journal	February 2017
The effects of crystallographic orientation and strain of thin Hf _0.5 Zr _0.5 O ₂ film on its ferroelectricity Hyuk Park, Min; Joon Kim, Han; Jin Kim, Yu Applied Physics Letters, Vol. 104, Issue 7 https://doi.org/10.1063/1.4866008	journal	February 2014
Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm Tian, Xuan; Shibayama, Shigehisa; Nishimura, Tomonori Applied Physics Letters, Vol. 112, Issue 10 https://doi.org/10.1063/1.5017094	journal	March 2018
Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon Nanoscale, Vol. 9, Issue 28 https://doi.org/10.1039/C7NR02121F	journal	January 2017
Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations Ihlefeld, Jon F.; Harris, David T.; Keech, Ryan Journal of the American Ceramic Society, Vol. 99, Issue 8 https://doi.org/10.1111/jace.14387	journal	July 2016
Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO ₂ Thin Films Grimley, Everett D.; Schenk, Tony; Sang, Xiahan Advanced Electronic Materials, Vol. 2, Issue 9 https://doi.org/10.1002/aelm.201600173	journal	July 2016
Stabilizing the ferroelectric phase in doped hafnium oxide Hoffmann, M.; Schroeder, U.; Schenk, T. Journal of Applied Physics, Vol. 118, Issue 7 https://doi.org/10.1063/1.4927805	journal	August 2015
Thermodynamic stability of binary oxides in contact with silicon Hubbard, K. J.; Schlom, D. G. Journal of Materials Research, Vol. 11, Issue 11 https://doi.org/10.1557/JMR.1996.0350	journal	November 1996
Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration Batra, Rohit; Huan, Tran Doan; Rossetti, George A. Chemistry of Materials, Vol. 29, Issue 21 https://doi.org/10.1021/acs.chemmater.7b02835	journal	October 2017
Atomic Layer Deposition of Hafnium and Zirconium Oxides Using Metal Amide Precursors Hausmann, Dennis M.; Kim, Esther; Becker, Jill Chemistry of Materials, Vol. 14, Issue 10 https://doi.org/10.1021/cm020357x	journal	October 2002
Pyroelectricity of silicon-doped hafnium oxide thin films Jachalke, Sven; Schenk, Tony; Park, Min Hyuk Applied Physics Letters, Vol. 112, Issue 14 https://doi.org/10.1063/1.5023390	journal	April 2018
Pyroelectric devices and materials Whatmore, R. W. Reports on Progress in Physics, Vol. 49, Issue 12 https://doi.org/10.1088/0034-4885/49/12/002	journal	December 1986
Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors Mueller, Stefan; Summerfelt, Scott R.; Muller, Johannes IEEE Electron Device Letters, Vol. 33, Issue 9 https://doi.org/10.1109/LED.2012.2204856	journal	September 2012
Impact of mechanical stress on ferroelectricity in (Hf _0.5 Zr _0.5 )O ₂ thin films Shiraishi, Takahisa; Katayama, Kiliha; Yokouchi, Tatsuhiko Applied Physics Letters, Vol. 108, Issue 26 https://doi.org/10.1063/1.4954942	journal	June 2016
Ferroelectricity in hafnium oxide thin films Böscke, T. S.; Müller, J.; Bräuhaus, D. Applied Physics Letters, Vol. 99, Issue 10 https://doi.org/10.1063/1.3634052	journal	September 2011
The origin of ferroelectricity in Hf _1−x Zr _x O ₂ : A computational investigation and a surface energy model Materlik, R.; Künneth, C.; Kersch, A. Journal of Applied Physics, Vol. 117, Issue 13 https://doi.org/10.1063/1.4916707	journal	April 2015
Micromachined infrared detectors based on pyroelectric thin films Muralt, Paul Reports on Progress in Physics, Vol. 64, Issue 10 https://doi.org/10.1088/0034-4885/64/10/203	journal	September 2001
A thermally robust and thickness independent ferroelectric phase in laminated hafnium zirconium oxide Riedel, S.; Polakowski, P.; Müller, J. AIP Advances, Vol. 6, Issue 9 https://doi.org/10.1063/1.4964300	journal	September 2016
Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si Chouprik, A.; Chernikova, A.; Markeev, A. Microelectronic Engineering, Vol. 178 https://doi.org/10.1016/j.mee.2017.05.028	journal	June 2017
Improved Subthreshold Swing and Short Channel Effect in FDSOI n-Channel Negative Capacitance Field Effect Transistors Kwon, Daewoong; Chatterjee, Korok; Tan, Ava J. IEEE Electron Device Letters, Vol. 39, Issue 2 https://doi.org/10.1109/LED.2017.2787063	journal	February 2018

Cited By (3)

Ferroelectric and pyroelectric properties of polycrystalline La-doped HfO ₂ thin films Mart, C.; Kühnel, K.; Kämpfe, T. Applied Physics Letters, Vol. 114, Issue 10 https://doi.org/10.1063/1.5089821	journal	March 2019
Analytical description of the size effect on pyroelectric and electrocaloric properties of ferroelectric nanoparticles Morozovska, Anna N.; Eliseev, Eugene A.; Glinchuk, Maya D. Physical Review Materials, Vol. 3, Issue 10 https://doi.org/10.1103/physrevmaterials.3.104414	journal	October 2019
Analytical description of the size effect on pyroelectric and electrocaloric properties of ferroelectric nanoparticles Morozovska, Anna N.; Eliseev, Eugene A.; Glinchuk, Maya D. arXiv https://doi.org/10.48550/arxiv.1906.02953	text	January 2019

Similar Records

Pyroelectric response in crystalline hafnium zirconium oxide (Hf _1- _x Zr _x O ₂ ) thin films

Journal Article · Mon Feb 13 00:00:00 EST 2017 · Applied Physics Letters · OSTI ID:1483977

Smith, S. W.; Kitahara, A. R.; Rodriguez, M. A.; +3 more

Stabilization of ferroelectric phase of Hf_0.58Zr_0.42O₂ on NbN at 4 K

Journal Article · Tue Mar 05 00:00:00 EST 2019 · Applied Physics Letters · OSTI ID:1483977

Henry, M. D.; Smith, S. W.; Lewis, R. M.; +1 more

Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO₂ Films

Journal Article · Thu Mar 30 00:00:00 EDT 2023 · ACS Applied Electronic Materials · OSTI ID:1483977

Xu, Bohan; Collins, Liam; Holsgrove, Kristina M.; +3 more

Related Subjects

36 MATERIALS SCIENCE

Title: Thickness scaling of pyroelectric response in thin ferroelectric Hf 1-xZr xO2 films

Citation Formats

References (33)

Cited By (3)

Similar Records

Related Subjects

Title: Thickness scaling of pyroelectric response in thin ferroelectric Hf _1-_xZr _xO₂ films